NXP BFG425W
RF Bipolar Transistors NPN 25 GHz wideband transistor
Brands: NXP Semiconductor
Mfr.Part #: BFG425W
Datasheet: BFG425W Datasheet (PDF)
Package/Case: SOT-343
Product Type: Transistors
BFG425W General Description
BFG425W is a high-frequency transistor that belongs to the NPN type and is designed for use in applications up to 6 GHz. Here are some of its features:
Features
- Collector-emitter voltage of 20V
- Collector current of 60mA
- Power dissipation of 200mW
- Maximum frequency of 6GHz
- Noise figure of 2.5dB at 1GHz
Application
- RF amplification in cellular phones and other wireless communication devices
- Oscillators and mixers in microwave circuits
- Satellite and terrestrial radio communications
- Cable modems and wireless LANs
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | Reach Compliance Code | |
ECCN Code | EAR99 | Collector Current-Max (IC) | 0.03 A |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 50 |
JESD-609 Code | e3 | Number of Elements | 1 |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.135 W |
Surface Mount | YES |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BFG425W component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : BFG425WX
Brands :
Package :
Description : This is a variant of BFG425W with higher power dissipation.
Part Number : BFG540W
Brands :
Package : SOT143
Description : NPN 9 GHz wideband transistor
Part Number : MMBFJ310LT1G
Brands :
Package : SOT-23-3
Description : JFET Transistor, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
Part points
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The BFG425W chip is a high-power, high-frequency transistor commonly used in wireless communication applications. It is designed to handle high RF power levels, making it suitable for use in power amplifiers. With its compact size and excellent thermal performance, the BFG425W chip is widely used in cell phones, Wi-Fi devices, and other wireless communication equipment.
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Features
The BFG425W is a light emitting diode (LED) lamp that operates at a maximum power of 425 watts. It has a high color rendering index (CRI) and a cool white color temperature. It is energy-efficient and long-lasting, making it suitable for a variety of lighting applications. -
Pinout
The BFG425W is a transistor with a pin count of 3. Pin 1 is the emitter, pin 2 is the base, and pin 3 is the collector. Its function is to amplify electrical signals, making it suitable for use in high-frequency and low-noise amplification applications. -
Application Field
The BFG425W is a high-performance NPN silicon RF transistor commonly used in various applications such as mobile communication equipment, wireless infrastructure, and terrestrial broadcasting. Its excellent frequency range (up to 5 GHz) and power handling capability make it suitable for a wide range of wireless communication systems and RF power amplifiers. -
Package
The BFG425W chip is available in a SOT343 package type, featuring a single form and a compact size.
Datasheet PDF
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