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NXP BFG425W

RF Bipolar Transistors NPN 25 GHz wideband transistor

ISO14001 ISO9001 DUNS

Brands: NXP Semiconductor

Mfr.Part #: BFG425W

Datasheet: BFG425W Datasheet (PDF)

Package/Case: SOT-343

Product Type: Transistors

RoHS Status:

Stock Condition: 3780 pcs, New Original

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Please submit RFQ for BFG425W or email to us: Email: [email protected], we will contact you within 12 hours.

BFG425W General Description

BFG425W is a high-frequency transistor that belongs to the NPN type and is designed for use in applications up to 6 GHz. Here are some of its features:

bfg425w

Features

  • Collector-emitter voltage of 20V
  • Collector current of 60mA
  • Power dissipation of 200mW
  • Maximum frequency of 6GHz
  • Noise figure of 2.5dB at 1GHz

Application

  • RF amplification in cellular phones and other wireless communication devices
  • Oscillators and mixers in microwave circuits
  • Satellite and terrestrial radio communications
  • Cable modems and wireless LANs

Specifications

Parameter Value Parameter Value
Rohs Code Yes Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 0.03 A
Configuration SINGLE DC Current Gain-Min (hFE) 50
JESD-609 Code e3 Number of Elements 1
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.135 W
Surface Mount YES

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the BFG425W component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   BFG425WX

Brands :  

Package :  

Description :   This is a variant of BFG425W with higher power dissipation.

Part Number :   BFG540W

Brands :  

Package :   SOT143

Description :   NPN 9 GHz wideband transistor

Part Number :   BFG591

Brands :  

Package :  

Description :  

Part Number :   MMBFJ310LT1G

Brands :  

Package :   SOT-23-3

Description :   JFET Transistor, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET

Part points

  • The BFG425W chip is a high-power, high-frequency transistor commonly used in wireless communication applications. It is designed to handle high RF power levels, making it suitable for use in power amplifiers. With its compact size and excellent thermal performance, the BFG425W chip is widely used in cell phones, Wi-Fi devices, and other wireless communication equipment.
  • Features

    The BFG425W is a light emitting diode (LED) lamp that operates at a maximum power of 425 watts. It has a high color rendering index (CRI) and a cool white color temperature. It is energy-efficient and long-lasting, making it suitable for a variety of lighting applications.
  • Pinout

    The BFG425W is a transistor with a pin count of 3. Pin 1 is the emitter, pin 2 is the base, and pin 3 is the collector. Its function is to amplify electrical signals, making it suitable for use in high-frequency and low-noise amplification applications.
  • Application Field

    The BFG425W is a high-performance NPN silicon RF transistor commonly used in various applications such as mobile communication equipment, wireless infrastructure, and terrestrial broadcasting. Its excellent frequency range (up to 5 GHz) and power handling capability make it suitable for a wide range of wireless communication systems and RF power amplifiers.
  • Package

    The BFG425W chip is available in a SOT343 package type, featuring a single form and a compact size.

Datasheet PDF

Preliminary Specification BFG425W PDF Download

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