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NXP BLF175
RF Mosfet 50 V 30 mA 108MHz 20dB 30W CRFM4
Brands: Rochester Electronics, Llc
Mfr.Part #: BLF175
Datasheet: BLF175 Datasheet (PDF)
Package/Case: SOT-123A
RoHS Status:
Stock Condition: 3378 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $63.480 | $63.480 |
| 200 | $24.567 | $4913.400 |
| 500 | $23.703 | $11851.500 |
| 1000 | $23.276 | $23276.000 |
In Stock:3378 PCS
BLF175 General Description
RF Mosfet 50 V 30 mA 108MHz 20dB 30W CRFM4
Features
- Frequency range: 1.8 - 400 MHz
- Output power: 175 W
- Operating voltage: 50 V
- Drain efficiency: 70%
- Gain: 19 dB
Application
- Broadcast transmitters
- Industrial heating
- Medical applications
- High-frequency applications
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Packaging | Tray | Part Status | Active |
| Technology | MOSFET (Metal Oxide) | Configuration | N-Channel |
| Frequency | 108MHz | Gain | 20dB |
| Voltage - Test | 50 V | Current Rating (Amps) | 4A |
| Current - Test | 30 mA | Power - Output | 30W |
| Voltage - Rated | 125 V | Package / Case | SOT-123A |
| Supplier Device Package | CRFM4 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BLF175 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : BLF177
Brands :
Package :
Description :
Part Number : BLF178
Brands :
Package :
Description :
Part Number : BLF177P
Brands :
Package :
Description :
Part Number : BLF178P
Brands :
Package :
Description :
Part Number : MRFE6VP61K25H
Brands :
Package : NI-1230
Description : WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8-600 MHZ, 1250 W CW
Part Number : MRFE6VP61K25HR6
Brands :
Package : CASE-5
Description : RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
Part Number : MRF6VP61K25H
Brands :
Package :
Description :
Part Number : MRF6VP61K25HR6
Brands :
Package :
Description :
Part points
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The BLF175 is a high-power RF transistor designed for broadband applications in the HF, VHF, UHF, and microwave frequency bands. It offers excellent efficiency and power output handling capabilities, making it suitable for use in various RF power amplifiers and transmitters.
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Equivalent
The equivalent products of BLF175 chip are BLF574 and BLF575. These are all common high-power LDMOS transistors specifically designed for use in telecommunications applications, including power amplifiers in the UHF band. They provide high efficiency and reliability in these types of systems. -
Features
The BLF175 is a high-power RF transistor with a frequency range of 600-1100 MHz and a maximum power output of 185 watts. It has a high gain and efficiency, making it ideal for use in applications such as broadcast transmitters, industrial heating systems, and radar systems. -
Pinout
The BLF175 is a RF Power LDMOS transistor with a pin count of 4. Pin 1 is the drain, Pin 2 is the gate-source, Pin 3 is the RF input and Pin 4 is the drain tab. It is commonly used in applications requiring high-power RF amplification. -
Manufacturer
The BLF175 is manufactured by NXP Semiconductors, a Dutch multinational semiconductor manufacturer specializing in automotive, security, and IoT solutions. NXP Semiconductors was founded in 2006 as a spin-off from Philips and is one of the top 20 semiconductor manufacturers globally. -
Application Field
The BLF175 is a high-power LDMOS transistor commonly used in RF power amplifier applications, such as in LTE base stations, broadcast transmitters, radar systems, and industrial heating systems. Its high efficiency and gain make it suitable for high-power RF applications where reliability and performance are critical. -
Package
The BLF175 chip is typically available in a SOT539A package, which is a Ni-PO-hermetically-sealed metal-ceramic flangeless package. It is in a single-ended form with dimensions of 13.6 mm x 13.6 mm x 3.07 mm and comes in a single-unit size.
Datasheet PDF
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