This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount!

SI7252DP-T1-GE3

SI7252DP-T1-GE3 Power Field-Effect Transistor

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SI7252DP-T1-GE3

Datasheet: SI7252DP-T1-GE3 Datasheet (PDF)

Package/Case: PowerPAK-SO-8

Product Type: FET, MOSFET Arrays

RoHS Status:

Stock Condition: 6,429 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for SI7252DP-T1-GE3 or email to us: Email: [email protected], we will contact you within 12 hours.

SI7252DP-T1-GE3 General Description

Mosfet Array 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual

Features

  • TrenchFET® power MOSFET,100 % Rg and UIS tested

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 36.7 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Dual
Fall Time 7 ns Forward Transconductance - Min 40 S
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 12 ns

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • SI7252DP-T1-GE3 is a chip developed by Silicon Laboratories. It is a digital isolator with a maximum data rate of 1 Mbps. It provides galvanic isolation of up to 4 kV RMS and operates with a supply voltage range of 1.7-5.5 V. The chip is designed for applications requiring noise immunity, voltage isolation, and signal isolation, such as industrial automation, power supplies, and medical devices.
  • Equivalent

    Equivalent products of the SI7252DP-T1-GE3 chip include the SII9022DP-T1-GE3, SII9023DP-T1-GE3, and SII9025DP-T1-GE3 chips.
  • Features

    The SI7252DP-T1-GE3 is a low RDS(on) brushless motor driver with integrated pre-driver and protection features. It provides precise control of motor current and speed through PWM input. The device also incorporates built-in protection features such as thermal shutdown, overcurrent protection, and undervoltage lockout.
  • Pinout

    The SI7252DP-T1-GE3 is a dual-channel, low-side MOSFET driver IC with a pin count of 8. It is used for driving N-channel MOSFETs in a variety of applications such as DC-DC converters, power supplies, and motor drivers.
  • Manufacturer

    The manufacturer of the SI7252DP-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that specializes in producing power MOSFETs, small-signal MOSFETs, and integrated circuits for various applications such as automotive, telecommunications, industrial, consumer, and more. They are known for their high-performance and reliable electronic components.
  • Application Field

    The SI7252DP-T1-GE3 is a power switch IC used for applications such as USB port protection, hot-swap circuits, and load switching. It can be used in various electronic devices including smartphones, tablets, laptops, and industrial equipment to provide overvoltage, overcurrent, and short-circuit protection for the power supply.
  • Package

    The SI7252DP-T1-GE3 chip is available in a Thin DFN (Dual Flat No-Lead) package type. Its size is 3 mm x 3 mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • TN2524N8-G

    TN2524N8-G

    Microchip

    TN2524N8-G is a N-type MOSFET designed to handle u...

  • DN3525N8-G

    DN3525N8-G

    Microchip

    Tape and Reel Packaged Silicon N-channel Transisto...

  • VP2450N8-G

    VP2450N8-G

    Microchip Technology

    P-Channel 500 V 160mA (Tj) 1.6W (Ta) Surface Mount...

  • SG2823L

    SG2823L

    MICROCHIP

    Bipolar (BJT) Transistor Array 8 NPN Darlington 95...

  • SG2803J

    SG2803J

    Microchip

    Bipolar (BJT) Transistor Array 8 NPN Darlington 50...

  • SG2003J

    SG2003J

    Microchip

    Bipolar (BJT) Transistor Array 7 NPN Darlington 50...