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NXP MRFE6P3300HR3
Trans RF FET N-CH 66V 5-Pin NI-860C3 T/R
Brands: NXP
Mfr.Part #: MRFE6P3300HR3
Datasheet: MRFE6P3300HR3 Datasheet (PDF)
Package/Case: NI-860C3
Product Type: RF MOSFET Transistors
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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RF Mosfet 32 V 1.6 A 857MHz ~ 863MHz 20.4dB 270W NI-860C3
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | NXP | Product Category: | RF MOSFET Transistors |
| RoHS: | Details | Transistor Polarity: | N-Channel |
| Technology: | Si | Vds - Drain-Source Breakdown Voltage: | 66 V |
| Minimum Operating Temperature: | - 65 C | Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT | Package / Case: | NI-860C3 |
| Packaging: | MouseReel | Brand: | NXP Semiconductors |
| Channel Mode: | Enhancement | Configuration: | Single Dual Drain Dual Gate |
| Height: | 5.69 mm | Length: | 34.16 mm |
| Product Type: | RF MOSFET Transistors | Series: | MRFE6P3300H |
| Factory Pack Quantity: | 250 | Subcategory: | MOSFETs |
| Type: | RF Power MOSFET | Vgs - Gate-Source Voltage: | - 500 mV, 12 V |
| Width: | 10.31 mm | Part # Aliases: | 935309635128 |
| Unit Weight: | 0.223087 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MRFE6P3300HR3 is a high-power RF power transistor designed for use in industrial, scientific, and medical (ISM) applications. It operates at 3300 MHz with a power output of up to 300W and features high efficiency and reliability. This chip is commonly used in RF heating, plasma processing, and high-power amplifiers.
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Equivalent
The equivalent products of the MRFE6P3300HR3 chip are the MRF6VP3300H and the MRF6VP3300HR6, which are also LDMOS transistors designed for high-power applications in the 1.8-600 MHz frequency range. These chips have similar specifications and performance characteristics to the MRFE6P3300HR3. -
Features
The MRFE6P3300HR3 is a high-power RF transistor designed for 300W pulsed applications in frequencies up to 3300 MHz. It features superior ruggedness, high gain, and low distortion, making it ideal for use in high-power RF applications such as radar systems and communication equipment. -
Pinout
The MRFE6P3300HR3 is a High Power RF LDMOS transistor with a pin count of 4. It has the following functions: Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4: Source. It is designed for high power applications in the HF, VHF, and UHF frequencies. -
Manufacturer
The MRFE6P3300HR3 is manufactured by NXP Semiconductors, a Dutch-American semiconductor manufacturer specializing in a wide range of products for the automotive, industrial, mobile, and communication sectors. NXP Semiconductors is known for producing high-performance RF power transistors, including the MRFE6P3300HR3 for RF applications. -
Application Field
The MRFE6P3300HR3 is primarily used in high-power RF amplifier applications, such as in telecommunications, radar systems, and industrial heating processes. It is commonly found in high-frequency and high-power amplification systems that require efficient and reliable performance. -
Package
The MRFE6P3300HR3 chip is a RF power transistor packaged in a NI-1230H-4S form with 4 leads. It has a size of 10.7 x 14.2 x 3.92 mm.
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