K4T51163QE-ZCE6
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA90
Brands: SAMSUNG SEMICONDUCTOR INC
Mfr.Part #: K4T51163QE-ZCE6
Datasheet: K4T51163QE-ZCE6 Datasheet (PDF)
Package/Case: BGA-84
Product Type: DRAMs
RoHS Status:
Stock Condition: 6554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomK4T51163QE-ZCE6 General Description
K4T51163QE-ZCE6 is a specific part number for a dynamic random access memory (DRAM) module. It is manufactured by Samsung and has a capacity of 4 gigabits (Gb). It uses DDR3 technology and is designed for use in computer systems and other electronic devices that require high-speed memory. The module operates at a voltage of 1.5 volts and has a clock frequency of 800 MHz. It is commonly used in applications such as desktop computers, laptops, and servers.
Features
- JEDEC standard 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
- 4 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
- Off-Chip Driver(OCD) Impedance Adjustment
- On Die Termination
- Special Function Support
- -PASR(Partial Array Self Refresh)
- -50ohm ODT
- -High Temperature Self-Refresh rate enable
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
- All of Lead-free products are compliant for RoHS
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Name | K4T51163QE-ZCE6 | Product Type | Memory |
Manufacturer | Samsung | Series | K4T |
Memory Type | DRAM | Memory Size | 8GB |
Data Rate | DDR4 | Data Bus Width | 64-bit |
Voltage | 1.2V | Operating Temperature | 0°C to 85°C |
Package / Case | FBGA |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4T51163QE-ZCE6 chip is a synchronous dynamic random-access memory (SDRAM) chip commonly used in electronic devices like computers and smartphones. It offers high-speed data storage and retrieval capabilities, making it suitable for various applications requiring rapid data processing.
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Equivalent
The K4T51163QE-ZCE6 chip is a DDR3 SDRAM manufactured by Samsung. Equivalent products include chips from other manufacturers such as Micron, SK Hynix, and Elpida, with similar specifications like capacity, speed, and voltage requirements. Examples include Micron's MT41J128M16JT, SK Hynix's H5TQ2G83BFR, and Elpida's EBJ21UE8BDS0. -
Pinout
The K4T51163QE-ZCE6 is a 512Mb DDR3 SDRAM with a pin count of 96. It is used primarily as a memory module in computing devices for storing and retrieving data quickly and efficiently. -
Manufacturer
The manufacturer of the K4T51163QE-ZCE6 is Samsung. Samsung is a multinational conglomerate known for its electronics, including smartphones, televisions, and semiconductor chips. It's one of the largest technology companies globally, with a diverse range of products and services. -
Application Field
The K4T51163QE-ZCE6 is a DDR3 SDRAM chip commonly used in a variety of electronic devices, including smartphones, tablets, laptops, and computer systems. Its high capacity and fast speed make it ideal for use in applications where quick data access and transfer speeds are required, such as gaming, multimedia editing, and data processing. -
Package
The K4T51163QE-ZCE6 chip comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, with a 12mm x 8.5mm form factor and a 0.8mm ball pitch.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products