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K4B2G1646Q-BCK0
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Brands: SAMSUNG
Mfr.Part #: K4B2G1646Q-BCK0
Datasheet: K4B2G1646Q-BCK0 Datasheet (PDF)
Package/Case: FBGA96
Product Type: Memory
K4B2G1646Q-BCK0 General Description
K4B2G1646Q-BCK0 is a specific part number for a memory chip. It is a DDR3L SDRAM (Double Data Rate 3 Low Voltage Synchronous Dynamic Random Access Memory) with a capacity of 2 gigabits (256 megabytes).
Features
- JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 900MHz fCK for 1866Mb/sec/pin 8 Banks Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13 Programmable Additive Latency: 0, CL-2 or CL-1 clock Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data-Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C
Application
- Used in computer systems, laptops, and servers for data storage and processing
- Suitable for use in networking equipment, such as routers and switches
- Can be used in consumer electronics, such as smartphones and tablets, for memory expansion
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Name | K4B2G1646Q-BCK0 | Product Type | DDR3 SDRAM |
| Manufacturer | Samsung | Series | K4B2G1646Q |
| Memory Type | DDR3 SDRAM | Memory Size | 2Gbit |
| Memory Organization | 256M x 16 | Data Rate | DDR3-1600-CL11 |
| Interface | DDR3 | Voltage | 1.5V |
| Operating Temperature | 0°C ~ 85°C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4B2G1646Q-BCK0 chip is a low power, high-speed CMOS dynamic random-access memory (DRAM) chip manufactured by Samsung. It has a capacity of 2 gigabytes (GB) and operates at a frequency of 800 MHz. This chip is commonly used in various electronic devices such as smartphones, tablets, laptops, and other computing devices.
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Equivalent
The equivalent products of the K4B2G1646Q-BCK0 chip are: - Micron MT47H64M16HR-25E:H - Hynix H5TC4G63AFR-PBA - Samsung K4B2G1646G-BCK0 - SK hynix H5TC4G63CFR-PBA - Micron MT47H64M16HR-25E:J -
Features
Key features of K4B2G1646Q-BCK0 include: - 2Gb DDR3 mobile SDRAM - Operates at an ultra-fast frequency of 1066 MHz - Compatible with a wide range of mobile devices - Low power consumption to extend battery life - Can be used in various applications such as smartphones, tablets, and laptops. -
Pinout
The K4B2G1646Q-BCK0 is a DDR3L SDRAM with a pin count of 96 pins. It is a 2Gb memory chip with a 16-bit I/O interface. This chip is commonly used in various electronic devices such as smartphones, tablets, and laptops for system memory storage and data processing. -
Manufacturer
Samsung is the manufacturer of the K4B2G1646Q-BCK0. It is a South Korean multinational conglomerate company that creates a wide range of products, including electronics, semiconductors, and telecommunications equipment. Samsung is one of the leading suppliers of memory chips in the world. -
Application Field
The K4B2G1646Q-BCK0 is a high-density, high-performance DDR4 SDRAM module commonly used in a variety of applications such as servers, workstations, gaming PCs, networking equipment, and industrial systems. Its fast data transfer speeds and large capacity make it ideal for high-bandwidth applications that require reliable and efficient memory solutions. -
Package
The K4B2G1646Q-BCK0 chip comes in a 78-ball 9x11.5mm FBGA package with a DDR3 SDRAM memory form. The size of the chip is 2Gb organized as 256Mbit x 8 I/Os.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
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