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IXFX26N90
N-Channel 900 V 26A (Tc) 560W (Tc) Through Hole PLUS247™-3
Brands: IXYS CORP
Mfr.Part #: IXFX26N90
Datasheet: IXFX26N90 Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 7707 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $22.087 | $22.087 |
| 200 | $8.548 | $1709.600 |
| 500 | $8.248 | $4124.000 |
| 1000 | $8.099 | $8099.000 |
In Stock:7707 PCS
IXFX26N90 General Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.
Features
- International Standard Packages
- High Current Handling Capability
- Low R
- DS(on)
- HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
Application
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC Motor Drives
- Temperature and Lighting Controls
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Ihs Manufacturer | IXYS CORP |
| Package Description | PLUS247, 3 PIN | Pin Count | 3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 3000 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900 V | Drain Current-Max (ID) | 26 A |
| Drain-source On Resistance-Max | 0.3 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSIP-T3 | JESD-609 Code | e1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | IN-LINE | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 560 W | Pulsed Drain Current-Max (IDM) | 104 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | TIN SILVER COPPER | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFX26N90 chip is a power MOSFET designed for high-performance applications. It features a low on-state resistance, high current capability, and excellent thermal performance. This chip is commonly used in power supply, motor control, and other high-power applications where efficient power management is critical.
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Equivalent
There are no direct equivalent products to the IXFX26N90 chip. However, similar power MOSFET chips from different manufacturers include Infineon's IRFPE40 and STMicroelectronics' STW20N90K5. It is recommended to consult datasheets and technical specifications to determine compatibility and suitability for your specific application. -
Features
1. IXFX26N90 is a power MOSFET transistor. 2. It has a voltage rating of 900V and a continuous current rating of 26A. 3. The transistor is compact and designed for high power applications. 4. It has low on-state resistance and high switching speed. 5. IXFX26N90 is suitable for use in power supplies, motor controls, and other high-power electronic circuits. -
Pinout
The IXFX26N90 is a MOSFET transistor with a pin count of 3. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. It is used for high power applications such as motor control and power supplies. -
Manufacturer
The IXFX26N90 is manufactured by IXYS Corporation, a leading global manufacturer of power semiconductors, integrated circuits, and other advanced electronics technologies. They specialize in developing high-performance power switching and control devices for a wide range of industries, including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
The IXFX26N90 is a high voltage power MOSFET commonly used in applications such as power supplies, motor drives, and high frequency inverters. It is also suitable for use in welding equipment, induction heating, and other industrial and automotive applications requiring high power and efficiency. -
Package
The IXFX26N90 chip is in a TO-247 package, with a through-hole form factor, and a size of approximately 17.5mm x 11.3mm x 4.6mm.
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