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IXTK120N25P
3-Pin N-Channel Transistor with TO-264AA Package, rated for 250V and 120A
Brands: Ixys
Mfr.Part #: IXTK120N25P
Datasheet: IXTK120N25P Datasheet (PDF)
Package/Case: TO-264-3
RoHS Status:
Stock Condition: 6852 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $11.294 | $11.294 |
| 200 | $4.371 | $874.200 |
| 500 | $4.218 | $2109.000 |
| 1000 | $4.142 | $4142.000 |
In Stock:6852 PCS
IXTK120N25P General Description
The IXTK120N25P is a high-power MOSFET transistor designed for use in high-performance applications. It is a N-Channel enhancement mode power MOSFET with a drain-source voltage (VDS) rating of 250V and continuous drain current (ID) of 120A. This makes it suitable for high-power applications in industries such as power supplies, motor control, and automotive systems.The transistor has a low on-resistance (RDS(on)) of 0.057 ohms, allowing for efficient power dissipation and minimal thermal resistance. This results in reduced power losses and improved efficiency in high-current applications.The IXTK120N25P features a TO-264 package, which provides good thermal conduction and high-power dissipation capabilities. It also has a wide operating temperature range of -55°C to 175°C, making it suitable for use in a variety of environmental conditions.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-264-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 250 V |
| Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 24 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 185 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 700 W |
| Channel Mode | Enhancement | Tradename | PolarHT |
| Series | IXTK120N25 | Brand | IXYS |
| Configuration | Single | Fall Time | 33 ns |
| Forward Transconductance - Min | 50 S | Height | 26.16 mm |
| Length | 19.96 mm | Product Type | MOSFET |
| Rise Time | 33 ns | Factory Pack Quantity | 25 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | PolarHT Power MOSFET | Typical Turn-Off Delay Time | 130 ns |
| Typical Turn-On Delay Time | 30 ns | Width | 5.13 mm |
| Unit Weight | 0.352740 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTK120N25P is a power MOSFET transistor chip designed for high power switching applications. It has a continuous current rating of 120A and a voltage rating of 250V. Its compact size and high efficiency make it ideal for use in power supplies, motor control, and other high-power applications.
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Equivalent
Some equivalent products of IXTK120N25P chip are IXFN120N25P, IXFN120N25T, IXKF120N25P, and IXKD120N25P. These devices are also power MOSFETs designed for high frequency and high power applications with similar specifications and performance characteristics. -
Features
The IXTK120N25P is a power MOSFET transistor with a voltage rating of 250V and a current rating of 120A. It has a low on-resistance of 48 mΩ and a fast switching speed. This transistor is suitable for high power applications such as motor control, power supplies, and inverters. -
Pinout
The pin count of IXTK120N25P is 7 pins. This device is a high-power N-channel IGBT (Insulated Gate Bipolar Transistor) module used for power switching applications. It combines the high-speed and low-voltage drive capabilities of an MOSFET with the high-current and low-saturation voltage capabilities of a bipolar transistor. -
Manufacturer
IXTK120N25P is manufactured by IXYS Corporation. They are a multinational semiconductor company specializing in the development and production of power semiconductors, integrated circuits, and power systems for a wide range of industries including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
IXTK120N25P is commonly used in applications such as industrial power supplies, motor controls, welding equipment, and switch mode power supplies. It is also used in automotive and transportation systems, as well as in renewable energy systems like solar inverters and wind turbines. -
Package
The IXTK120N25P chip is in a TO-264 package, with a transistor form and size of 3.3 mm x 10 mm.
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