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Orders Over
$5000IHW30N160R2
IGBT 1600V 60A 312W TO247-3
Brands: Infineon Technologies
Mfr.Part #: IHW30N160R2
Datasheet: IHW30N160R2 Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 9,204 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IHW30N160R2 General Description
IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Series | TrenchStop® | Package | Tube |
| Product Status | Obsolete | IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1600 V | Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 90 A | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 312 W | Switching Energy | 4.37mJ |
| Input Type | Standard | Gate Charge | 94 nC |
| Td (on/off) @ 25°C | -/525ns | Test Condition | 600V, 30A, 10Ohm, 15V |
| Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | PG-TO247-3-1 |
| Base Product Number | IHW30 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IHW30N160R2 is a high-power insulated-gate bipolar transistor (IGBT) chip designed for use in power electronics applications. It features a current rating of 30A and a voltage rating of 1600V, making it suitable for high-power applications such as motor drives, inverters, and power supplies. Its insulated-gate design allows for higher efficiency and lower switching losses compared to traditional bipolar transistors.
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Equivalent
Equivalent products of IHW30N160R2 chip include Infineon's IHW30N160R2H4, IGBT module; STMicroelectronics' IKW30N160RH5, IGBT with ultrafast and antiparallel diodes; and Wolfspeed's CAS325M12HM2, CAS325M12XM2, and CAS325M12HM4, silicon carbide power modules. These products offer similar power handling capabilities and performance characteristics. -
Features
1. IHW30N160R2 is a high power, high voltage IGBT module. 2. It has a 30A collector current rating and 1600V collector emitter voltage. 3. It is designed for industrial applications requiring high power and voltage capabilities. 4. It has low switching losses and high efficiency. 5. The module is compact and easy to install. -
Pinout
The IHW30N160R2 is a 30A 1600V ultrafast diode module with dual diodes in a TO-247 package. It has 2 pins for the anode and cathode of each diode. The function of this module is to provide high current rectification for applications such as motor drives, inverters, and welding equipment. -
Manufacturer
Infineon Technologies is the manufacturer of IHW30N160R2. They are a German semiconductor company that produces a wide range of products including power semiconductors, microcontrollers, and sensors for automotive, industrial, and consumer electronics applications. -
Application Field
IHW30N160R2 is a high voltage MOSFET suitable for use in various applications such as motor control, power supplies, and inverters. It is commonly used in industrial and automotive environments where high voltage and high power capabilities are required. -
Package
The IHW30N160R2 chip is a IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. It has a form of a semiconductor device and measures 15mm in length and 10mm in width.
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