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ON HUF75345P3
N-Channel 55 V 75A (Tc) 325W (Tc) Through Hole TO-220-3
Brands: ON Semiconductor, LLC
Mfr.Part #: HUF75345P3
Datasheet: HUF75345P3 Datasheet (PDF)
Package/Case: TO-220
RoHS Status:
Stock Condition: 2508 pcs, New Original
Product Type: Transistors
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.248 | $2.248 |
| 10 | $1.955 | $19.550 |
| 50 | $1.772 | $88.600 |
| 100 | $1.584 | $158.400 |
| 500 | $1.500 | $750.000 |
| 800 | $1.463 | $1170.400 |
In Stock:2508 PCS
HUF75345P3 General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features
- 75A, 55V
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance SPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
Application
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
| Rds On - Drain-Source Resistance: | 7 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 275 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 325 W | Channel Mode: | Enhancement |
| Tradename: | UltraFET | Series: | HUF75345P3 |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 26 ns |
| Height: | 16.3 mm | Length: | 10.67 mm |
| Product Type: | MOSFET | Rise Time: | 118 ns |
| Factory Pack Quantity: | 50 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Type: | MOSFET |
| Typical Turn-Off Delay Time: | 42 ns | Typical Turn-On Delay Time: | 14 ns |
| Width: | 4.7 mm | Part # Aliases: | HUF75345P3_NL |
| Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
| feature-material | Si | feature-process-technology | UltraFET |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
| feature-maximum-drain-source-resistance-mohm | 7@10V | feature-typical-gate-charge-vgs-nc | 220@20V |
| feature-typical-gate-charge-10v-nc | 125 | feature-typical-input-capacitance-vds-pf | 4000@25V |
| feature-typical-output-capacitance-pf | 1450 | feature-maximum-power-dissipation-mw | 325000 |
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | TO-220 |
| feature-standard-package-name1 | TO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | No |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The HUF75345P3 chip is a power MOSFET (metal-oxide semiconductor field-effect transistor) designed for high current and voltage applications. It operates at a voltage of 55V and a continuous drain current of 75A, making it suitable for use in various power electronic circuits. The chip features low on-state resistance and high switching performance, making it beneficial for applications such as motor drives, power supplies, and DC-DC converters.
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Equivalent
There are no direct equivalent products to the HUF75345P3 chip. However, there are alternative options available in the market such as the IRF7530PbF or the IRF7536PbF. These alternatives have similar specifications and can be used in similar applications as the HUF75345P3. -
Features
The HUF75345P3 is a power MOSFET with a drain-source voltage of 55V, a drain current of 75A, and an RDS(on) of 3.5mΩ. It has a low gate charge and is suitable for high-frequency applications. -
Pinout
The HUF75345P3 is a MOSFET transistor with a TO-220 package. It has 3 pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source. It is used for switching and amplifying applications in various electronic circuits. -
Manufacturer
The manufacturer of HUF75345P3 is Infineon Technologies. It is a leading semiconductor manufacturer that specializes in producing a wide range of power electronics components, including power transistors, modules, and integrated circuits for various applications such as automotive, industrial, consumer, and energy. -
Application Field
The HUF75345P3 is a power MOSFET transistor commonly used in various applications such as electric motor control, power supplies, inverters, and PWM (Pulse Width Modulation) circuits. It is designed to handle high power levels and can be utilized in industries such as automotive, industrial automation, and renewable energy systems. -
Package
The package type of the HUF75345P3 chip is TO-220AB. It has a through-hole mounting form and its size is approximately 10.3mm x 15.6mm x 4.6mm.
Datasheet PDF
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