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ON FDMS86300

N-Channel 80 V 19A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

ISO14001 ISO9001 DUNS

Brands: ON Semiconductor, LLC

Mfr.Part #: FDMS86300

Datasheet: FDMS86300 Datasheet (PDF)

Package/Case: QFN8

Product Type: Transistors

RoHS Status:

Stock Condition: 2777 pcs, New Original

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Quick Quote

Please submit RFQ for FDMS86300 or email to us: Email: [email protected], we will contact you within 12 hours.

FDMS86300 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

fdms86300

Features

  • Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
  • Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Application

  • AC-DC Merchant Power Supply

Specifications

Parameter Value Parameter Value
Manufacturer: onsemi Product Category: MOSFET
RoHS: Details Technology: Si
Mounting Style: SMD/SMT Package / Case: Power-56-8
Transistor Polarity: N-Channel Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 42 A
Rds On - Drain-Source Resistance: 5.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.4 V Qg - Gate Charge: 59 nC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 104 W Channel Mode: Enhancement
Tradename: PowerTrench Series: FDMS86300
Packaging: MouseReel Brand: onsemi / Fairchild
Configuration: Single Fall Time: 9 ns
Forward Transconductance - Min: 60 S Height: 1.1 mm
Length: 6 mm Product Type: MOSFET
Rise Time: 26 ns Factory Pack Quantity: 3000
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 36 ns Typical Turn-On Delay Time: 31 ns
Width: 5 mm Unit Weight: 0.002402 oz
feature-category Power MOSFET feature-material Si
feature-process-technology TMOS feature-configuration Single Quad Drain Triple Source
feature-channel-mode Enhancement feature-channel-type N
feature-number-of-elements-per-chip 1 feature-maximum-drain-source-voltage-v 80
feature-maximum-gate-source-voltage-v ±20 feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a 19 feature-maximum-drain-source-resistance-mohm 3.9@10V
feature-typical-gate-charge-vgs-nc 72@10V|59@8V feature-typical-gate-charge-10v-nc 72
feature-typical-input-capacitance-vds-pf 5325@40V feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw 2500 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count 8
feature-supplier-package PQFN EP feature-standard-package-name1 QFN
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code EAR99
feature-svhc Yes

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FDMS86300 chip is a power MOSFET designed for high-speed switching applications. It offers a low on-resistance, allowing for efficient power management and reduced power losses. The chip is commonly used in various electronic devices and systems, such as battery chargers, DC-DC converters, and motor control circuits. Its compact size and high performance make it a popular choice for modern electronics.
  • Features

    The FDMS86300 features a high power density fifth-generation trench process, low on-resistance, and excellent thermal performance. It also has a logic-level gate drive, low gate charge, and a low gate resistance. Additionally, it offers a wide safe operating area (SOA) and reliable operation in various applications.
  • Pinout

    The FDMS86300 is a power MOSFET module with a pin count of 3. The pin functions include source, drain, and gate.
  • Manufacturer

    The FDMS86300 is manufactured by Fairchild Semiconductor. Fairchild Semiconductor is an American company that specializes in the design, development, and production of power management and discrete semiconductor devices.
  • Application Field

    The FDMS86300 is a high-performance power-stage transistor designed for use in applications such as electric vehicles, industrial motor drives, and renewable energy systems. It offers low on-resistance and excellent thermal performance, making it suitable for high-power and high-voltage applications.
  • Package

    The FDMS86300 chip is available in a Power-33 package. Its form is a single, small surface-mount device (SMD). As for size, it typically measures around 5mm x 6mm or similar compact dimensions.

Datasheet PDF

Preliminary Specification FDMS86300 PDF Download

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  • Product

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  • quantity

    Minimum order quantity starts from 1pcs.

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    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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