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ON FDMS86101DC
N-Channel 100 V 14.5A (Ta), 60A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
Brands: ON Semiconductor, LLC
Mfr.Part #: FDMS86101DC
Datasheet: FDMS86101DC Datasheet (PDF)
Package/Case: Power 56
RoHS Status:
Stock Condition: 2757 pcs, New Original
Product Type: Transistors
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.436 | $2.436 |
| 10 | $2.149 | $21.490 |
| 30 | $1.969 | $59.070 |
| 100 | $1.784 | $178.400 |
| 500 | $1.702 | $851.000 |
| 1000 | $1.665 | $1665.000 |
In Stock:2757 PCS
FDMS86101DC General Description
This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
- Shielded Gate MOSFET Technology
- Dual Cool™ Top Side Cooling PQFN package
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
- Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS Compliant
Application
- DC-DC Merchant Power Supply
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDMS86101DC | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | QFN-8 | Manufacturer Package Code | 506EG |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 60 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 216 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 14.5 A | Drain-source On Resistance-Max | 0.0075 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-240AA |
| JESD-30 Code | R-PDSO-F5 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125 W | Pulsed Drain Current-Max (IDM) | 200 A |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | FLAT | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | TMOS | |
| feature-configuration | Single Quad Drain Triple Source | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 14.5 |
| feature-maximum-drain-source-resistance-mohm | 7.5@10V | feature-typical-gate-charge-vgs-nc | 31@10V|18@5V |
| feature-typical-gate-charge-10v-nc | 31 | feature-typical-input-capacitance-vds-pf | 2354@50V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 3200 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 8 | feature-supplier-package | Power 56 |
| feature-standard-package-name1 | feature-cecc-qualified | No | |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDMS86101DC chip is a power MOSFET designed for high-frequency and high-efficiency applications. It features a low ON-resistance and a low gate charge, enabling it to handle high currents with reduced power losses. The chip is ideal for use in various power conversion applications, such as DC-DC converters, motor drivers, and buck/boost regulators.
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Equivalent
There aren't any directly equivalent products to the FDMS86101DC chip. However, similar MOSFET chips that could potentially be used as alternatives include the FDMS86181, FDMS86182, and FDMS86185. These chips have similar specifications and may meet the required functionality. -
Features
FDMS86101DC is a 100 V N-channel PowerTrench MOSFET designed for synchronous rectified buck switching applications. It features low on-resistance, low gate charge, and fast switching characteristics, making it suitable for high-performance power management circuits, DC-DC converters, and motor control applications. -
Pinout
The FDMS86101DC has a pin count of 8 and is a power MOSFET with low on-resistance designed for applications requiring higher power density and efficiency. -
Manufacturer
The manufacturer of the FDMS86101DC is Fairchild Semiconductor. Fairchild Semiconductor is a global company that designs, manufactures, and supplies power and discrete semiconductors for various industries such as automotive, consumer electronics, and industrial applications. -
Application Field
The FDMS86101DC is an advanced power MOSFET used for switching applications in various fields such as automotive, telecommunications, industrial, and consumer products. This MOSFET offers low on-resistance, high current carrying capacity, and fast switching characteristics, making it suitable for applications that require efficient power management and high performance. -
Package
The FDMS86101DC chip comes in the QFN package type, with a form factor of dual complementary metal-oxide-semiconductor (CMOS). The size of the chip is approximately 6 mm x 6 mm.
Datasheet PDF
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