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NXP BLF278C
5-pin compact dual flat no-lead package
Brands: Rochester Electronics, Llc
Mfr.Part #: BLF278C
Datasheet: BLF278C Datasheet (PDF)
Package/Case: SOT-262A1
RoHS Status:
Stock Condition: 2505 pcs, New Original
Product Type: RF Integrated Circuits
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $379.222 | $379.222 |
| 200 | $151.313 | $30262.600 |
| 500 | $146.256 | $73128.000 |
| 1000 | $143.758 | $143758.000 |
In Stock:2505 PCS
BLF278C General Description
The BLF278C is a high-power RF transistor designed for use in VHF and UHF transmitters. It operates at frequencies ranging from 50 MHz to 500 MHz with a maximum output power of 350 watts in Class-AB operation. It has a gain of 10 dB and a maximum drain efficiency of 65%.The BLF278C is built using a gold metallization process that ensures high reliability and performance. It features a thermally enhanced package that allows for efficient heat dissipation, enabling the transistor to operate at high power levels for extended periods without overheating.This transistor is ideal for applications requiring high power output such as broadcast transmitters, radar systems, and particle accelerators. It can also be used in industrial and scientific applications where high-frequency power amplification is required.The BLF278C is equipped with built-in protection features to safeguard the transistor from overvoltage, overcurrent, and overtemperature conditions. It is RoHS compliant, meeting environmental regulations for the reduction of hazardous substances in electronic components.
Features
- Designed for RF power amplifiers up to 150 MHz
- Typical power output of 300 W
- High power gain of 24 dB
- Integrated ESD protection
- Gold metallization and Silicon Nitride passivation
- Enhanced reliability for rugged operation
Application
- High power RF amplification
- Radar systems
- Communications systems
- Industrial heating systems
- RF plasma sources
- Amateur radio amplifiers
- Medical equipment
- Satellite communication systems
- Defense applications
- Wireless infrastructure
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Packaging | Bulk | Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 18dB | Voltage - Test | 50 V |
| Current Rating (Amps) | 2.5mA | Current - Test | 200 mA |
| Power - Output | 300W | Voltage - Rated | 125 V |
| Package / Case | SOT-262A1 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BLF278C component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : BLF278XR
Brands :
Package :
Description :
Part Number : BLF278XRS
Brands :
Package :
Description :
Part Number : BLF278XRSL
Brands :
Package :
Description :
Part points
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The BLF278C is a high-power LDMOS field-effect transistor (FET) that is commonly used in RF and microwave applications. It is designed for operation in the 470-860 MHz frequency range and has a high power output and high efficiency, making it ideal for use in broadcasting, radar, and other high-power transmitters.
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Equivalent
The equivalent products of the BLF278C chip are Freescale MRF373ALR1, Infineon M67770L, and NXP BLF888A. These chips are all RF power transistors that can be used in high power applications such as radio frequency amplifiers and transmitters. -
Features
BLF278C is a high-power NXP LDMOS transistor designed for use in a wide range of applications, including industrial, scientific, and medical equipment. It offers high output power, high efficiency, and a wide frequency range, making it suitable for various RF power amplification needs. -
Pinout
The BLF278C is a microwave RF power transistor with a pin count of 3. Pin 1 is for the emitter/source, pin 2 is for the collector/drain, and pin 3 is for the base/gate. It is used for high-power RF amplification in applications such as radar, broadcasting, and communications systems. -
Manufacturer
NXP Semiconductors is the manufacturer of the BLF278C. It is a multinational company that specializes in designing and manufacturing high-performance semiconductor solutions for a wide range of industries such as automotive, industrial, and consumer electronics. NXP Semiconductors is known for its innovative products and technologies in the semiconductor industry. -
Application Field
The BLF278C is commonly used in applications such as industrial heating, plasma generators, medical equipment, and radio frequency (RF) amplifiers. It is also utilized in military and aerospace communications systems, radar systems, and electronic warfare applications due to its high power and efficiency capabilities. -
Package
The BLF278C chip is packaged in a ceramic/metal flange, with a form of a power transistor. The size of the chip is approximately 27.0 x 15.4 x 3.5 mm (flange included), suitable for high-power RF applications.
Datasheet PDF
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