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vishay SI7489DP-T1-E3

Name: SI7489DP-T1-E3
Rating: 4.5 (10 reviews)

SI7489DP-T1-E3 is a P-channel MOSFET transistor designed to handle up to 28 A of current and up to 100 V of voltage

Brands: Vishay

Mfr.Part #: SI7489DP-T1-E3

Datasheet: SI7489DP-T1-E3 Datasheet (PDF)

Package/Case: PowerPAK-SO-8

Product Type: MOSFET

RoHS Status:

Stock Condition: 6000 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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SI7489DP-T1-E3 General Description

MOSFET P-CH 100V 28A PPAK SO-8

Features

Rds On (Max) @ Id, Vgs
41mOhm @ 7.8A, 10V

Power Dissipation (Max)
5.2W (Ta), 83W (Tc)

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 50 V

Mfr
Vishay Siliconix

Vgs(th) (Max) @ Id
3V @ 250µA

Vgs (Max)
±20V

Drain to Source Voltage (Vdss)
100 V

Current - Continuous Drain (Id) @ 25°C
28A (Tc)

FET Type
P-Channel

Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V

Technology
MOSFET (Metal Oxide)

Operating Temperature
-55°C ~ 150°C (TJ)

Mounting Type
Surface Mount

Specifications

Parameter	Value	Parameter	Value
feature-category	Power MOSFET	feature-material
feature-process-technology	TrenchFET	feature-configuration	Single Quad Drain Triple Source
feature-channel-mode	Enhancement	feature-channel-type	P
feature-number-of-elements-per-chip	1	feature-maximum-drain-source-voltage-v	100
feature-maximum-gate-source-voltage-v	±20	feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a	28	feature-maximum-drain-source-resistance-mohm	41@10V
feature-typical-gate-charge-vgs-nc	106@10V\|[email protected]	feature-typical-gate-charge-10v-nc	106
feature-typical-input-capacitance-vds-pf	4600@50V	feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw	5200	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	8
feature-supplier-package	PowerPAK SO	feature-standard-package-name
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No
Series	TrenchFET®	Product Status	Active
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	41mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 50 V
Power Dissipation (Max)	5.2W (Ta), 83W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The SI7489DP-T1-E3 chip is an electronic component developed by vishay siliconix. it is designed for power management applications and features a high-side load switch with overcurrent protection. the chip offers a low on-resistance and fast switching performance, making it suitable for various power control tasks in automotive, industrial, and consumer electronics.
Features

The SI7489DP-T1-E3 is a dual n-channel 30 v (d-s) mosfet designed for use in power management applications. it features low on-resistance, fast switching speed, and a small sot-363 package for space-constrained designs. additionally, it has a logic-level gate drive, making it compatible with low-voltage control signals.
Pinout

The SI7489DP-T1-E3 is a dual n-channel mosfet. it has an 8-pin package, with the following pin configuration: 1 - source 1, 2 - drain 1, 3 - gate 1, 4 - nc, 5 - source 2, 6 - drain 2, 7 - gate 2, 8 - nc.
Manufacturer

The manufacturer of the SI7489DP-T1-E3 is vishay siliconix. vishay siliconix is a company that specializes in the design, manufacture, and distribution of power and small-signal discrete semiconductors and passive electronic components.
Application Field

The SI7489DP-T1-E3 is a voltage level translator ic. it can be used in various applications where voltage translation is required between different logic levels, such as communication interfaces, data converters, memory modules, and other digital systems.

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