PC28F512M29EWHB
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA T/R
Brands: Micron Technology
Mfr.Part #: PC28F512M29EWHB
Datasheet: PC28F512M29EWHB Datasheet (PDF)
Package/Case: BGA-64
Product Type: NOR Flash
PC28F512M29EWHB General Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)
Features
- High-Performance Read, Program and Erase
- – 96 ns initial read access
- – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- – 8-, 16-, and continuous-word synchronous-burst Reads
- – Programmable WAIT configuration
- – Customer-configurable output driver impedance
- – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
- – Block Erase: 0.9 s per block (typ)
- – 20 μs (typ) program/erase suspend
- Architecture
- – 16-bit wide data bus
- – Multi-Level Cell Technology
- – Symmetrically-Blocked Array Architecture
- – 256-Kbyte Erase Blocks
- – 1-Gbit device: Eight 128-Mbit partitions
- – 512-Mbit device: Eight 64-Mbit partitions
- – 256-Mbit device: Eight 32-Mbit partitions
- – 128-Mbit device: Eight 16-Mbit partitions
- – Read-While-Program and Read-While-Erase
- – Status Register for partition/device status
- – Blank Check feature
- Quality and Reliability
- – Expanded temperature: –30 °C to +85 °C
- – Minimum 100,000 erase cycles per block
- – 65nm Process Technology
- Power
- – Core voltage: 1.7 V - 2.0 V
- – I/O voltage: 1.7 V - 2.0 V
- – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
- – Deep Power-Down mode: 2 μA (typ)
- – Automatic Power Savings mode
- – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
- Software
- – Micron® Flash data integrator (FDI) optimized
- – Basic command set (BCS) and extended command set (ECS) compatible
- – Common Flash interface (CFI) capable
- Security
- – One-time programmable (OTP) space
- 64 unique factory device identifier bits
- 2112 user-programmable OTP bits
- – Absolute write protection: VPP = GND
- – Power-transition erase/program lockout
- – Individual zero latency block locking
- – Individual block lock-down
- Density and packaging
- – 128Mb, 256Mb, 512Mbit, and 1-Gbit
- – Address-data multiplexed and non-multiplexed interfaces
- – 64-Ball Easy BGA
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | Micron Technology | Product Category: | NOR Flash |
Mounting Style: | SMD/SMT | Package / Case: | BGA-64 |
Series: | M29EW | Memory Size: | 512 Mbit |
Supply Voltage - Min: | 2.7 V | Supply Voltage - Max: | 3.6 V |
Active Read Current - Max: | 50 mA | Interface Type: | Parallel |
Organization: | 64 M x 8/32 M x 16 | Data Bus Width: | 8 bit/16 bit |
Timing Type: | Asynchronous | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C | Packaging: | MouseReel |
Brand: | Micron | Memory Type: | NOR |
Product Type: | NOR Flash | Speed: | 100 ns |
Standard: | Common Flash Interface (CFI) | Factory Pack Quantity: | 2000 |
Subcategory: | Memory & Data Storage |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The PC28F512M29EWHB chip is a flash memory device with a capacity of 512MB. It features a 40nm process technology, a 1.8V power supply, and offers fast read and write speeds. The chip is designed for use in various high-performance applications, such as telecommunications, networking, automotive, and industrial devices.
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Equivalent
Some equivalent products of PC28F512M29EWHB chip are PC28F512M29EWLA, PC28F512M29ESLA, and PC28F512M29EBDA. These chips offer similar features and performance characteristics as the PC28F512M29EWHB chip produced by Micron Technology. -
Features
PC28F512M29EWHB features a 512Mb NAND Flash memory with a 16-bit interface, operating voltage of 1.8V, advanced security features, and high performance and reliability ideal for automotive and industrial applications. It also offers fast program and erase operations, extensive error correction and data retention capabilities. -
Pinout
The PC28F512M29EWHB is a 64-pin flash memory chip. It is a 512Mb (64MB) NOR Flash memory with x16 parallel interface. It is commonly used in applications requiring high-density, non-volatile memory storage such as embedded systems, automotive, and industrial applications. -
Manufacturer
The PC28F512M29EWHB is manufactured by Micron Technology, Inc., which is an American multinational corporation that produces computer memory and data storage products. Micron is a leading provider of advanced semiconductor solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and other innovative technologies for storage and memory applications. -
Application Field
The PC28F512M29EWHB is commonly used in embedded systems, industrial control systems, automotive applications, communication devices, and other applications that require high performance and reliability. It is suitable for data storage, program execution, and firmware updates in various electronic devices. -
Package
The PC28F512M29EWHB chip comes in a TSOP package (Thin Small-Outline Package), in the form of a surface-mount device. It has a size of 12mm x 20mm.
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Minimum order quantity starts from 1pcs.
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