NSV60600MZ4T1G
Bipolar Transistors - BJT PNP LOW VCE(SAT)
Brands: onsemi
Mfr.Part #: NSV60600MZ4T1G
Datasheet: NSV60600MZ4T1G Datasheet (PDF)
Package/Case: TO-261-4,TO-261AA
RoHS Status:
Stock Condition: 6446 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.369 | $0.369 |
10 | $0.314 | $3.140 |
30 | $0.286 | $8.580 |
100 | $0.259 | $25.900 |
500 | $0.241 | $120.500 |
1000 | $0.232 | $232.000 |
In Stock:6446 PCS
NSV60600MZ4T1G General Description
The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.
Features
- Low Collector-Emitter Saturation Voltage
- High DC Current Gain
- High Current-Gain Bandwidth Product
- Superior gain linearity
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Application
- Linear voltage regulation
- Power management for portable devices
- Switching regulator
- Inductive load driver (e.g. motors, fans, relays)
- Linear controls
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Status | Active | Transistor Type | PNP |
Current - Collector (Ic) (Max) | 6 A | Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 350mV @ 600mA, 6A | Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V | Power - Max | 800 mW |
Frequency - Transition | 100MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 (TO-261) |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NSV60600MZ4T1G is a power management chip designed for use in portable electronic devices. It features multiple power management functions including voltage regulation and power monitoring, all in a compact and efficient package. This chip is ideal for applications where space and power efficiency are critical considerations.
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Equivalent
Some equivalent products of NSV60600MZ4T1G chip are Maxim MAX60600, Texas Instruments TPS731xx, Analog Devices ADP120, and ON Semiconductor NCP612. -
Features
NSV60600MZ4T1G is a high-performance 60 GHz millimeter wave radar sensor that offers accurate distance measurement, object detection, and tracking capabilities. It features a compact size, low power consumption, and multiple target tracking functionality, making it ideal for various industrial and automotive applications. -
Pinout
The NSV60600MZ4T1G is a 40-pin QFN package semiconductor device used for power management and voltage regulation in electronic circuits. It provides multiple output voltage rails and can handle high power loads. Its pins are used for input voltage, ground, control signals, and various output voltages. -
Manufacturer
NSV60600MZ4T1G is manufactured by ON Semiconductor, a multinational corporation that produces power and signal management, logic, discrete, and custom devices for a variety of industries including automotive, communications, and industrial applications. -
Application Field
NSV60600MZ4T1G is a high-power RF transistor ideally suited for applications in radar systems, industrial heating, plasma generation, and medical equipment requiring high-frequency operation. It is commonly used in industrial and medical RF applications where high power and efficiency are critical. -
Package
The NSV60600MZ4T1G chip is packaged in a surface-mount, plastic, 4-pin TO-252 form. The size of the chip is 2.94x6.22 mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products