NSS60600MZ4T1G
Bipolar (BJT) Transistor PNP 60 V 6 A 100MHz 800 mW Surface Mount SOT-223 (TO-261)
Brands: onsemi
Mfr.Part #: NSS60600MZ4T1G
Datasheet: NSS60600MZ4T1G Datasheet (PDF)
Package/Case: TO-261-4,TO-261AA
RoHS Status:
Stock Condition: 6263 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNSS60600MZ4T1G General Description
The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.
Features
- Low Collector-Emitter Saturation Voltage
- High DC Current Gain
- High Current-Gain Bandwidth Product
- Superior gain linearity
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Application
- Linear voltage regulation
- Power management for portable devices
- Switching regulator
- Inductive load driver (e.g. motors, fans, relays)
- Linear controls
Specifications
Parameter | Value | Parameter | Value |
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Product Status | Active | Transistor Type | PNP |
Current - Collector (Ic) (Max) | 6 A | Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 350mV @ 600mA, 6A | Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V | Power - Max | 800 mW |
Frequency - Transition | 100MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 (TO-261) |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NSS60600MZ4T1G chip is a power switch designed by ON Semiconductor. It operates at 8V to 36V voltage range and provides a maximum continuous current of 600mA. The chip includes built-in thermal shutdown and current limiting features, making it suitable for various applications like USB ports, power distribution systems, and battery chargers. Its small package size and low thermal resistance make it an ideal choice for space-constrained designs.
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Equivalent
There are no direct equivalent products to the NSS60600MZ4T1G chip. However, similar options could include the NSS60300MZ4T1G or NSS60100MZ4T1G chips, which are part of ON Semiconductor's NCP161x family of devices with similar functionality and specifications. -
Features
The NSS60600MZ4T1G is a MOSFET transistor. It has a maximum drain-source voltage of 60V, a continuous drain current of 4A, and a low on-resistance of 60mOhm. It is designed for low-voltage, high-speed applications and offers excellent performance and reliability. -
Pinout
The NSS60600MZ4T1G is a dual common cathode Schottky diode with a pin count of 6. It is commonly used in voltage clamping applications to protect sensitive components from overvoltage. The pin functions include the anode for each diode, the cathode for each diode, and a common cathode connection. -
Manufacturer
The manufacturer of the NSS60600MZ4T1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, offering a wide range of products including power management, connectivity, analog, and advanced sensors. They cater to various industries such as automotive, aerospace, industrial, and consumer electronics. -
Application Field
The NSS60600MZ4T1G is a high-speed surge protection device. It is often used in applications where protection against surge events is essential, such as industrial control systems, telecommunications equipment, and data centers. -
Package
The NSS60600MZ4T1G chip comes in a SOT-223 package type, has a quad flat no-leads (QFN) form, and has a size of approximately 5.2mm x 6.2mm.
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