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NGTB50N60FLWG
NGTB50N60FLWG product description: N-channel IGBT chip capable of handling up to 600V and 100A
Brands: Onsemi
Mfr.Part #: NGTB50N60FLWG
Datasheet: NGTB50N60FLWG Datasheet (PDF)
Package/Case: TO-247
Product Type: IGBT Transistors
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNGTB50N60FLWG General Description
The NGTB50N60FLWG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power switching applications. It belongs to the IGBT (Insulated Gate Bipolar Transistor) family, combining the advantages of MOSFET and bipolar transistor technologies.Here are some key details:1. **Manufacturer**: Infineon Technologies AG produces the NGTB50N60FLWG.2. **Voltage and Current Ratings**: It has a voltage rating of 600 volts and a maximum continuous drain current of 50 amperes. These ratings indicate its capability to handle high-power applications.3. **Package Type**: The "FLWG" in the part number denotes the package type. In this case, it refers to a TO-247 package, which is a commonly used package for power transistors due to its ability to dissipate heat efficiently.4. **Features**: The NGTB50N60FLWG MOSFET features low on-state voltage drop, fast switching speed, and high ruggedness, making it suitable for various high-power switching applications such as motor control, power supplies, inverters, and induction heating.5. **Applications**: Its characteristics make it ideal for use in applications requiring efficient power management and high reliability, particularly in industrial and automotive systems where robustness and efficiency are critical.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.65 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 100 A |
| Pd - Power Dissipation | 223 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | NGTB50N60FLWG |
| Brand | onsemi | Gate-Emitter Leakage Current | 200 nA |
| Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
| Subcategory | IGBTs |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NGTB50N60FLWG chip is a power semiconductor device that is used in various electronic applications. It has a high voltage rating of 600V and a maximum current of 50A. The chip is designed for efficient power conversion and offers low on-resistance, high switching speeds, and high thermal conductivity. It is commonly used in power supplies, motor drives, and inverters for renewable energy systems.
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Features
The NGTB50N60FLWG is a power MOSFET with a voltage rating of 600V, designed for high-performance applications. It offers low on-resistance, high switching speeds, and improved efficiency. This MOSFET also comes with a TO-247 package for better thermal dissipation and is suitable for use in power supplies, motor drives, and other high-voltage applications. -
Pinout
The NGTB50N60FLWG is a power MOSFET transistor with a TO-247 package. Its pin count is 3, consisting of the gate (G), drain (D), and source (S) terminals. This transistor is designed for power electronics applications and provides a high voltage rating of 600V and a maximum current rating of 50A. -
Manufacturer
The manufacturer of the NGTB50N60FLWG is Infineon Technologies. It is a multinational semiconductor company that produces power semiconductor devices, microcontrollers, and sensors. -
Application Field
The NGTB50N60FLWG is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for applications in power electronics. It can be used in various systems such as motor drives, renewable energy converters, uninterruptible power supplies, and power factor correction. Its high voltage and current capabilities make it suitable for high-power and high-efficiency applications. -
Package
The NGTB50N60FLWG chip comes in a module package type known as Module, NPT Trench IGBT. It has a form factor known as TO-3P and a small size with dimensions of approximately 15.72mm x 22.1mm x 5.51mm.
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