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NGTB40N120FL2WG
IGBT Trench Field Stop 1200 V 80 A 535 W Through Hole TO-247
Brands: onsemi
Mfr.Part #: NGTB40N120FL2WG
Datasheet: NGTB40N120FL2WG Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $5.550 | $5.550 |
| 10 | $4.912 | $49.120 |
| 30 | $4.456 | $133.680 |
| 100 | $4.130 | $413.000 |
In Stock:9458 PCS
NGTB40N120FL2WG General Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
Features
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 µs Short Circuit Capability
Application
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | IGBT Transistors |
| RoHS: | Details | Technology: | Si |
| Package / Case: | TO-247 | Mounting Style: | Through Hole |
| Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2 V | Maximum Gate Emitter Voltage: | - 20 V, + 20 V |
| Continuous Collector Current at 25 C: | 80 A | Pd - Power Dissipation: | 535 W |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Series: | NGTB40N120FL2 | Packaging: | Tube |
| Brand: | onsemi | Gate-Emitter Leakage Current: | 200 nA |
| Product Type: | IGBT Transistors | Factory Pack Quantity: | 30 |
| Subcategory: | IGBTs |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NGTB40N120FL2WG chip is a semiconductor device used in power electronic applications. It is a 1200V IGBT (Insulated Gate Bipolar Transistor) module that combines low conduction loss and high switching speed. The chip is designed for applications such as motor drives, power supplies, and renewable energy systems, offering efficient power switching and improved performance.
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Features
The NGTB40N120FL2WG is a 1200V IGBT power module with a low-loss and high-speed switching performance. It features a low saturation voltage, fast turn-off and reverse recombination voltage recovery, and a compact and lightweight package design with integrated gate driver. -
Pinout
The NGTB40N120FL2WG is a power semiconductor device. It has 3 pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. It is designed for high-voltage applications and can handle up to 40A of current and 1200V of voltage. -
Manufacturer
The manufacturer of the NGTB40N120FL2WG is ON Semiconductor. ON Semiconductor is a multinational semiconductors and solutions supplier. It specializes in designing and manufacturing power management, analog, logic, discrete, and custom devices for various industries, including automotive, industrial, communication, and computing sectors. -
Application Field
The NGTB40N120FL2WG is a high-power MOSFET designed for various applications such as switching power supplies, motor control, and uninterruptible power supplies (UPS). It is specifically suitable for applications requiring high efficiency and reliability, such as industrial and automotive systems, renewable energy systems, and electric vehicle charging. -
Package
The NGTB40N120FL2WG chip has a TO-247-3 package type, form is Tubular and its size is 10.42mm x 28.7mm x 5.6mm.
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