Images are for reference only See Product Specifications
ON NDT451AN
MOSFET N-Channel FET Enhancement Mode
Brands: ON Semiconductor, LLC
Mfr.Part #: NDT451AN
Datasheet: NDT451AN Datasheet (PDF)
Package/Case: SOT-223
Product Type: Transistors
NDT451AN General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
- 7.2A, 30V
RDS(ON) = 0.035Ω @ VGS = 10V
RDS(ON) = 0.05Ω @ VGS = 4.5V - High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-223-4 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V | Id - Continuous Drain Current: | 7.2 A |
| Rds On - Drain-Source Resistance: | 30 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 30 nC |
| Minimum Operating Temperature: | - 65 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 3 W | Channel Mode: | Enhancement |
| Series: | NDT451AN | Packaging: | MouseReel |
| Brand: | onsemi / Fairchild | Configuration: | Single |
| Fall Time: | 10 ns | Forward Transconductance - Min: | 11 S |
| Height: | 1.8 mm | Length: | 6.5 mm |
| Product Type: | MOSFET | Rise Time: | 13 ns |
| Factory Pack Quantity: | 4000 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Type: | MOSFET |
| Typical Turn-Off Delay Time: | 29 ns | Typical Turn-On Delay Time: | 12 ns |
| Width: | 3.5 mm | Part # Aliases: | NDT451AN_NL |
| Unit Weight: | 0.003951 oz | Pin Count | 4 |
| Package Category | SOT223 (3-Pin) | Released Date | Mar 31, 2021 |
| Last Modified Date | Mar 7, 2023 4:10 PM UTC |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
Step1 :Product
-
Step2 :Vacuum packaging
-
Step3 :Anti-static bag
-
Step4 :Individual packaging
-
Step5 :Packaging boxes
-
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The NDT451AN chip is a Non-Destructive Testing (NDT) integrated circuit designed for industrial applications. It offers high-precision measurements for material thickness, corrosion, conductivity, and flaw detection through eddy current and impedance measurements. With its compact size and low power consumption, the NDT451AN chip is suitable for use in various sectors, including aerospace, automotive, and manufacturing industries.
-
Features
The NDT451AN is an N-channel Trench MOSFET with a low on-resistance and a high current rating. It has a voltage rating of 30V, a continuous current rating of 67A, and a power dissipation rating of 43W. It is designed for use in a wide range of applications such as power supplies, motor drives, and DC-DC converters. -
Pinout
The NDT451AN is an 8-pin integrated circuit. It is a N-channel, enhancement-mode power MOSFET with a drain-source voltage rating of 500V, drain current capability of 3.5A, and low on-resistance. The pin count and function are as follows: Pin 1: Gate, Pin 2 & 3: Drain, Pin 4: Source, Pins 5-8: Not Connected. -
Application Field
The NDT451AN, a type of non-destructive testing (NDT) sensor, is commonly used in application areas such as quality control and inspection of welded joints, pipelines, and structural elements in various industries including aerospace, automotive, oil and gas, and civil engineering. Its advanced technology allows for accurate and reliable detection of defects and abnormalities without causing damage to the tested materials. -
Package
The NDT451AN chip has a BGA package type, with dimensions of approximately 4.5mm x 3.2mm x 0.75mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
-
We have rich products, can meet your various needs.
-
Minimum order quantity starts from 1pcs.
-
Lowest international shipping fee starts from $0.00
-
365 days quality guarantee for all products
Top-notch quality and competitive pricing, making Ovaga our preferred supplier.