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ON NDS331N

Name: NDS331N
Rating: 4.5 (10 reviews)

Brief overview: NDS331N, a SOT-23 MOSFETs lineup that meets ROHS requirements

Brands: Onsemi

Mfr.Part #: NDS331N

Datasheet: NDS331N Datasheet (PDF)

Package/Case: SOT-23-3

RoHS Status:

Stock Condition: 2,994 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty	Unit Price	Ext Price
5	$0.095	$0.475
50	$0.079	$3.950
150	$0.070	$10.500
500	$0.063	$31.500
3000	$0.054	$162.000
6000	$0.051	$306.000

In Stock: 2,994 PCS

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Quick Quote

Please submit RFQ for NDS331N or email to us: Email: [email protected], we will contact you within 12 hours.

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Remark

NDS331N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

1.3 A, 20 V
R_DS(ON) = 0.21Ω @ V_GS= 2.7 V
R_DS(ON) = 0.16 Ω @ V_GS= 4.5 V
Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
High density cell design for extremely low R_DS(ON)
Exceptional on-resistance and maximum DC current capability

Application

This product is general usage and suitable for many different applications.

Specifications

Parameter	Value	Parameter	Value
Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SOT-23-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.3 A	Rds On - Drain-Source Resistance	210 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	500 mV
Qg - Gate Charge	5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Series	NDS331N
Brand	onsemi / Fairchild	Configuration	Single
Fall Time	25 ns	Height	1.12 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	25 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	5 ns
Width	1.4 mm	Part # Aliases	NDS331N_NL
Unit Weight	0.001129 oz

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.