This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

K6R4016V1D-TC10

This product is a 256KX16 static RAM module operating on a CMOS platform, ensuring fast data processing with a 10ns response time

ISO14001 ISO9001 DUNS

Brands: Olimex Ltd.

Mfr.Part #: K6R4016V1D-TC10

Datasheet: K6R4016V1D-TC10 Datasheet (PDF)

Package/Case: TSOP-44

Product Type: DRAM

RoHS Status:

Stock Condition: 6864 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for K6R4016V1D-TC10 or email to us: Email: [email protected], we will contact you within 12 hours.

K6R4016V1D-TC10 General Description

K6R4016V1D-TC10 is a chip designed for use in memory applications. It features a capacity of 16 megabits and operates at a speed of 10 nanoseconds. The chip is ideal for applications that require fast and reliable memory storage.

K6R4016V1D-TC10

Features

  • K6R4016V1D-TC10 is a synchronous dynamic random access memory (SDRAM) module
  • It has a capacity of 16 megabytes
  • It operates at a clock speed of 100 MHz
  • It is organized as 1Mx16 bits
  • It has a burst length of 1, 2, 4 or 8
  • It requires a supply voltage of 3.3V
  • Application

  • The K6R4016V1D-TC10 is a low power, high-speed CMOS static RAM designed for use in various applications including telecommunications equipment, industrial controllers, networking devices, and automotive electronics
  • Its high-speed access and low power consumption make it ideal for use in high-performance systems that require fast and reliable memory storage
  • Specifications

    Parameter Value Parameter Value
    Product Category DRAM Brand Olimex Ltd.
    Product Type DRAM Factory Pack Quantity 1
    Subcategory Memory & Data Storage

    Shipping

    Shipping Type Ship Fee Lead Time
    DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
    Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
    UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
    TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
    EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
    REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

    Processing Time:Shipping fee depend on different zone and country.

    Payment

    Terms of payment Hand Fee
    Wire Transfer Wire Transfer charge US$30.00 banking fee.
    Paypal Paypal charge 4.0% service fee.
    Credit Card Credit Card charge 3.5% service fee.
    Western Union Western Union charge US.00 banking fee.
    Money Gram Money Gram charge US$0.00 banking fee.

    Guarantees

    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

    2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

    Packing

    • Product

      Step1 :Product

    • Vacuum packaging

      Step2 :Vacuum packaging

    • Anti-static bag

      Step3 :Anti-static bag

    • Individual packaging

      Step4 :Individual packaging

    • Packaging boxes

      Step5 :Packaging boxes

    • bar-code shipping tag

      Step6 :bar-code shipping tag

    All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

    Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
    • ESD

    Part points

    • The K6R4016V1D-TC10 chip is a dynamic random-access memory (DRAM) integrated circuit manufactured by Samsung. It has a capacity of 64 megabits (4 megabytes) and operates at a speed of 10 nanoseconds (100 MHz). It is commonly used in computer systems and electronic devices for storing and retrieving data quickly.
    • Equivalent

      Some equivalent products of the K6R4016V1D-TC10 chip are the IS42S16400F-6TLI and the M5M4V4169ATP-7 chips.
    • Features

      K6R4016V1D-TC10 is part of a dynamic random access memory (DRAM) series. It has a capacity of 16 megabits (2 megabytes), operates at a speed of 100 MHz, and uses voltage supply of 5 volts. It has a synchronous interface and offers low power consumption, making it suitable for various applications such as computers, printers, and other electronic devices.
    • Pinout

      The K6R4016V1D-TC10 is a 16M-bit CMOS SRAM chip with a pin count of 44. Its main function is to store and retrieve data in various electronic devices, including computer systems, networking equipment, and telecommunications devices.
    • Manufacturer

      The manufacturer of the K6R4016V1D-TC10 is Samsung. Samsung is a multinational conglomerate company based in South Korea. It is known for its diverse product range, including electronics, appliances, and various other industrial sectors.
    • Application Field

      The K6R4016V1D-TC10 is a 16M-bit Static Random Access Memory (SRAM) chip. It can be used in various applications such as computer systems, networking devices, telecommunications equipment, and other electronic devices requiring high-speed data storage and retrieval capabilities.
    • Package

      The K6R4016V1D-TC10 chip is packaged in a plastic TSOP (Thin Small Outline Package) with a 44-pin configuration. The chip has a form factor of 400 mils and a size of 6.4mm x 10mm.

    We provide high quality products, thoughtful service and after sale guarantee

    • Product

      We have rich products, can meet your various needs.

    • quantity

      Minimum order quantity starts from 1pcs.

    • shipping

      Lowest international shipping fee starts from $0.00

    • guarantee

      365 days quality guarantee for all products

    Ratings and Reviews

    Ratings
    Please rate the product !
    Please enter a comment

    Please submit comments after logging into your account.

    Submit

    Recommend

    • M48Z18-100PC1

      M48Z18-100PC1

      Stmicroelectronics

      Efficient power management technology for reliable...

    • M93S46-WMN6TP

      M93S46-WMN6TP

      STMicroelectronics, Inc

      EEPROM Memory IC 1Kbit SPI 2 MHz 8-SOIC

    • M93C66-RMC6TG

      M93C66-RMC6TG

      STMicroelectronics, Inc

      EEPROM Memory IC 4Kbit Microwire 1 MHz 8-UFDFPN (2...

    • R1LV0816ASB-5SI#B0

      R1LV0816ASB-5SI#B0

      Renesas Technology Corp

      SRAM Memory IC 8Mbit Parallel 55 ns 44-TSOP II

    • M24M01-DFMN6TP

      M24M01-DFMN6TP

      Stmicroelectronics

      STMICROELECTRONICS - M24M01-DFMN6TP - EEPROM with ...

    • M24M01-RDW6TP

      M24M01-RDW6TP

      Stmicroelectronics

      1Mbit EEPROM with I2C interface housed in a TSSOP-...