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IXTH12N120
Trans MOSFET N-CH Si 1.2KV 12A 3-Pin(3+Tab) TO-247AD
Brands: IXYS
Mfr.Part #: IXTH12N120
Datasheet: IXTH12N120 Datasheet (PDF)
Package/Case: TO-247-3
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIXTH12N120 General Description
N-Channel 1200 V 12A (Tc) 500W (Tc) Through Hole TO-247 (IXTH)
Features
- International standard package JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Fast switching times
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | IXYS | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV | Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 1.4 Ohms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 500 W | Channel Mode: | Enhancement |
| Packaging: | Tube | Brand: | IXYS |
| Configuration: | Single | Fall Time: | 17 ns |
| Height: | 21.46 mm | Length: | 16.26 mm |
| Product Type: | MOSFET | Rise Time: | 25 ns |
| Factory Pack Quantity: | 30 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 24 ns | Width: | 5.3 mm |
| Unit Weight: | 0.211644 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTH12N120 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) chip designed for use in power electronics applications. It offers low saturation voltage and high switching speed, making it ideal for use in motor drives, inverters, and other high-power industrial applications.
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Equivalent
Some equivalent products of the IXTH12N120 chip include the IXTH20N120, IXTH22N120, and IXTH25N120. These chips are also power MOSFETs designed for high power switching applications, with similar specifications and performance characteristics to the IXTH12N120. -
Features
The IXTH12N120 is a high-speed, high-voltage insulated gate bipolar transistor (IGBT) designed for use in high-frequency switching applications. It features a low VCE(sat) and low switching losses, making it suitable for various power electronics applications such as motor drives, inverters, and power supplies. -
Pinout
IXTH12N120 is a power MOSFET transistor with a TO-247 package. It has 3 pins: gate (G), drain (D), and source (S). It is designed for high power applications up to 12A and 1200V. -
Manufacturer
IXTH12N120 is manufactured by IXYS Corporation, a semiconductor company specializing in power semiconductors, integrated circuits, and RF power products. Established in 1983, IXYS focuses on developing innovative solutions for energy efficiency, renewable energy, and power management applications. -
Application Field
IXTH12N120 is a high-performance MOSFET with a continuous drain current of 12A and a breakdown voltage of 1200V. It is suitable for applications such as switch-mode power supplies, motor control, renewable energy systems, and industrial equipment where high voltage and high current handling capabilities are required. -
Package
The IXTH12N120 chip is a power transistor with a TO-247 package type, through-hole form, and a size of 22.5mm x 10.67mm.
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