IXKR25N80C
Trans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 247
Brands: IXYS
Mfr.Part #: IXKR25N80C
Datasheet: IXKR25N80C Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $20.282 | $20.282 |
200 | $7.850 | $1570.000 |
500 | $7.573 | $3786.500 |
1000 | $7.437 | $7437.000 |
In Stock:9458 PCS
IXKR25N80C General Description
These Power MOSFETs based on Super Junction technologyfeature the lowest RDS(on)in 600V-800V classMOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Features
- Silicon chip on Direct-Copper-Bond substrate
- 3rd generation CoolMOS™
- (1)
- power MOSFET
- Enhanced total power density
- Low thermal resistance
Application
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
- Welding
- Inductive heating
- Advantages:
- Easy assembly
- Space savings
- High power density
- (1)
- CoolMOS™ is a trademark ofInfineon Technologies AG.
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 800 V | Id - Continuous Drain Current: | 25 A |
Rds On - Drain-Source Resistance: | 125 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 180 nC |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 250 W | Channel Mode: | Enhancement |
Tradename: | CoolMOS | Series: | IXKR25N80 |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 6 ns |
Height: | 21.34 mm | Length: | 16.13 mm |
Product Type: | MOSFET | Rise Time: | 15 ns |
Factory Pack Quantity: | 30 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 72 ns |
Typical Turn-On Delay Time: | 25 ns | Width: | 5.21 mm |
Unit Weight: | 0.211644 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXKR25N80C is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring efficient power switching. It operates with a voltage rating of 800V and a current rating of 25A. The chip's features include low VCE(sat), fast switching, and a built-in diode for freewheeling. This makes it suitable for use in industrial motor drives, UPS systems, and power supplies.
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Equivalent
The IXKR25N80C is a MOSFET transistor. Equivalent products include IRFP4768PBF, FDPF18N50T, and STW9N150. Always check datasheets for specific requirements. -
Features
The IXKR25N80C is a high-voltage MOSFET transistor with a VDS rating of 800V, a maximum current of 25A, and a low on-state resistance for efficient power handling. It features fast switching characteristics suitable for various power electronic applications. -
Pinout
The IXKR25N80C is a MOSFET transistor with a TO-247 package. It typically has 3 pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins. It's primarily used in power electronics applications for switching and amplification purposes. -
Manufacturer
The manufacturer of the IXKR25N80C is IXYS Corporation. It is a semiconductor company that designs and produces power semiconductors, advanced mixed-signal ICs, and digital ICs. It serves a wide range of industries such as automotive, aerospace, and renewable energy. -
Application Field
The IXKR25N80C can be used in various applications such as switch mode power supplies, hard switching circuits, welding equipment, induction heating, and motor control. It is a high-voltage, high-current rated IGBT (Insulated Gate Bipolar Transistor) that can efficiently handle loads in these applications. -
Package
The IXKR25N80C chip comes in a TO-247 package, has a discrete form, and its size is approximately 15.87mm x 20.57mm x 4.83mm (0.625" x 0.809" x 0.190").
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