Images are for reference only See Product Specifications
IXFN82N60Q3
Trans MOSFET N-CH 600V 66A 4-Pin SOT-227B
Brands: IXYS
Mfr.Part #: IXFN82N60Q3
Datasheet: IXFN82N60Q3 Datasheet (PDF)
Package/Case: SOT-227-4
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: Discrete Semiconductor Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $55.378 | $55.378 |
| 200 | $21.432 | $4286.400 |
| 500 | $20.678 | $10339.000 |
| 1000 | $20.306 | $20306.000 |
In Stock:9458 PCS
IXFN82N60Q3 General Description
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics,enhanced device ruggedness, and high energy efficiency.Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conductionand switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTMprocess, yielding a device with a fast intrinsic rectifier which provides for low reverserecovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.
Features
- Low Rds
- on
- per silicon area
- Low Q
- g
- and Q
- gd
- Excellent dV/dt performance
- High Speed Switching
- Fast intrinsic Rectifier
- Low Intrinsic Gate Resistance
- High Avalanche Energy Capabilities
- Excellent Thermal Performance
Application
- Power Factor Correction
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Server and Telecom Power Systems
- Arc Welding
- Plasma Cutting
- Induction Heating
- Solar Generation Systems
- Motor Controls
- Advantages:
- Easy to Mount
- High Power Density
- Space savings
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | IXYS | Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details | Technology: | Si |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 | Series: | IXFN82N60 |
| Packaging: | Tube | Brand: | IXYS |
| Configuration: | Single | Id - Continuous Drain Current: | 66 A |
| Number of Channels: | 1 Channel | Pd - Power Dissipation: | 960 W |
| Product Type: | Discrete Semiconductor Modules | Rds On - Drain-Source Resistance: | 75 mOhms |
| Rise Time: | 300 ns | Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules | Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 600 V |
| Unit Weight: | 1.058219 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The IXFN82N60Q3 is a high-power MOSFET chip designed for use in high voltage applications. It has a breakdown voltage of 600V and a current rating of 82A, making it ideal for power supplies, motor control, and other high-power electronics. The chip offers low on-state resistance and high switching speed for efficient operation.
-
Equivalent
Some equivalent products of IXFN82N60Q3 chip are Infineon IPW65R019C7, Fairchild FDB85965, and Vishay SIHGAP60N60E. These are also power MOSFETs with similar specifications and performance characteristics. -
Features
IXFN82N60Q3 is a fast switching N-channel power MOSFET with a high power handling capability of 82A and 600V. It has a low on-resistance of 0.065 ohms, making it efficient for high power applications. The MOSFET also has a compact TO-268 package with a lead-free design for environmentally friendly applications. -
Pinout
IXFN82N60Q3 is a power MOSFET with a TO-268 package, having 3 pins: gate, drain, and source. It is designed for high-speed switching and high-power applications due to its low on-resistance and fast switching speed. -
Manufacturer
IXYS Corporation is the manufacturer of IXFN82N60Q3. It is a global semiconductor company that designs, develops, and manufactures power semiconductors used in a wide range of applications, including industrial, automotive, telecommunications, and consumer electronics. They specialize in providing high-performance power conversion and power management solutions. -
Application Field
IXFN82N60Q3 is a N-channel power MOSFET designed for high voltage applications. It is commonly used in power supplies, motor control, lighting, and other high voltage switching applications. Its high efficiency, low on-resistance, and high current carrying capacity make it suitable for a wide range of industrial and automotive applications. -
Package
The IXFN82N60Q3 chip comes in a TO-247 package type, with a single form that is through-hole mounted. The size of the chip is approximately 25.4mm x 10.4mm x 3mm.
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
