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IXFN50N80Q2
N-Channel Silicon Metal-oxide Semiconductor FET
Brands: Ixys
Mfr.Part #: IXFN50N80Q2
Datasheet: IXFN50N80Q2 Datasheet (PDF)
Package/Case: SOT-227-4
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: Discrete Semiconductor Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $34.417 | $34.417 |
| 30 | $33.224 | $996.720 |
In Stock:9458 PCS
IXFN50N80Q2 General Description
The IXFN50N80Q2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS Corporation, a reputable semiconductor company. Here are its key details:1. **Manufacturer**: IXYS Corporation, a global leader in power semiconductors. 2. **Part Number**: IXFN50N80Q2. 3. **Type**: Power MOSFET, specifically an N-channel enhancement-mode MOSFET.4. **Voltage and Current Ratings**: The "50" in the part number indicates it can handle high voltages, likely around 800 volts, making it suitable for high-power applications. The "N80" suggests it can handle currents up to 80 amps.5. **Package Type**: Q2 signifies that it comes in a TO-268 package, also known as a D2Pak or D3Pak package, which is a widely used surface mount package for power semiconductors.6. **Technology**: It likely utilizes advanced silicon technology and may incorporate features such as low on-resistance and fast switching speeds, typical of modern power MOSFETs.7. **Applications**: Due to its high voltage and current ratings, it can be used in various power electronics applications, including power supplies, motor control, renewable energy systems, and industrial automation.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | Discrete Semiconductor Modules | RoHS | Details |
| Product | Power MOSFET Modules | Technology | Si |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Chassis Mount |
| Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Brand | IXYS |
| Configuration | Single | Fall Time | 13 ns |
| Height | 9.6 mm | Id - Continuous Drain Current | 50 A |
| Length | 38.23 mm | Number of Channels | 1 Channel |
| Pd - Power Dissipation | 1.135 kW | Product Type | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance | 150 mOhms | Rise Time | 25 ns |
| Factory Pack Quantity | 10 | Subcategory | Discrete Semiconductor Modules |
| Tradename | HiPerFET | Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 26 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V | Width | 25.42 mm |
| Unit Weight | 1.058219 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IXFN50N80Q2 is a high-voltage, fast-switching MOSFET chip. It is designed for power amplification applications, particularly in motor control, UPS systems, and power supplies. It features low on-resistance, high current capacity, and high-speed switching capabilities. With a voltage rating of 800V and a current rating of 50A, this chip offers efficient and reliable performance in high-power applications.
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Equivalent
There are several equivalent products to the IXFN50N80Q2 chip, including the IRFS7530, FGB50N60SMD, IRFI9630G, and FGH40N60SFD. -
Features
The IXFN50N80Q2 is a power MOSFET transistor with a voltage rating of 800V, a current rating of 50A, and a low on-state resistance. It has a small form factor, high power density, and is suitable for use in applications such as power supplies, motor control, and inverters. -
Pinout
The IXFN50N80Q2 is a power MOSFET transistor. It has a pin count of 3, which includes a Drain pin, a Source pin, and a Gate pin. The Drain pin is used for power input and output, the Source pin is connected to the ground, and the Gate pin is used to control the transistor's operation. -
Manufacturer
The manufacturer of the IXFN50N80Q2 is IXYS Corporation. It is a semiconductor company that develops and produces power semiconductors, integrated circuits, and other electronic components for various applications, including power management and conversion, motor control, and telecommunications. -
Application Field
The IXFN50N80Q2 is a high-power MOSFET that can be used in various applications such as motor drives, power supplies, inverters, and industrial equipment. It is designed to handle high voltages and currents, making it suitable for demanding power electronics applications. -
Package
The IXFN50N80Q2 chip is available in a TO-247 package type. It has a quad construction and measures about 19mm x 8.8mm x 4.45mm in size.
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