IXKN45N80C

Part points

• IXKN45N80C is a high voltage MOSFET chip used in power electronics applications. It has a maximum drain-source voltage of 800V and a current rating of 45A. The chip is designed for efficient power conversion and high reliability in demanding environments.

• Equivalent

  Some equivalent products of the IXKN45N80C chip include the IRKH45F80, IXKH45N80C, and IXFN45N80. These chips are all high power insulated-gate bipolar transistors (IGBTs) that can be used in various power applications including motor drives, inverters, and power supplies.

• Features

  1. N-channel power MOSFET 2. 800V drain-source voltage 3. 45A continuous drain current 4. Low ON-resistance 5. High-speed switching 6. TO-247 package 7. Suitable for high power applications 8. Built-in diode for reverse voltage protection

• Pinout

  The IXKN45N80C is a power MOSFET with a TO-264 package. It has a pin count of 3, which includes the gate, drain, and source. The function of the IXKN45N80C is to control the flow of electrical current in high-power applications.

• Manufacturer

  IXKN45N80C is manufactured by IXYS Corporation, a company that specializes in the design, development, and manufacture of power semiconductors and integrated circuits. IXYS Corporation focuses on power control and conversion technology for the power management, motor control, and lighting industries.

• Application Field

  The IXKN45N80C is a high-power insulated gate bipolar transistor (IGBT) commonly used in industrial applications such as motor drives, inverters, and power supplies. It is also suitable for applications in renewable energy systems, uninterruptible power supplies (UPS), and welding equipment due to its high current and voltage ratings.

• Package

  The IXKN45N80C chip is available in a TO-3P package type with a through-hole mounting style. The chip itself is in a transistor form and has a size of approximately 10mm x 4mm x 4mm.