Infineon IRFB3307ZPBF
Trans MOSFET N-CH Si 75V 128A 3-Pin(3+Tab) TO-220AB Tube
Brands: Infineon Technologies Corporation
Mfr.Part #: IRFB3307ZPBF
Datasheet: IRFB3307ZPBF Datasheet (PDF)
Package/Case: TO-220AB
RoHS Status:
Stock Condition: 2888 pcs, New Original
Product Type: Transistors
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.101 | $1.101 |
10 | $0.920 | $9.200 |
50 | $0.821 | $41.050 |
100 | $0.710 | $71.000 |
500 | $0.660 | $330.000 |
1000 | $0.637 | $637.000 |
In Stock:2888 PCS
IRFB3307ZPBF General Description
N-Channel 75 V 120A (Tc) 230W (Tc) Through Hole TO-220AB
Features
- Industry standard through-hole power package
- High-current rating
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100 kHz
- Softer body-diode compared to previous silicon generation
- Wide portfolio available
- Standard pinout allows for drop in replacement
- High-current carrying capability package
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Application
- Battery powered applications
- Power tools
- DC motor drives
- Light Electric Vehicles (LEV)
- SMPS
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
RHoS | yes | PBFree | yes |
HalogenFree | yes | Source Content uid | IRFB3307ZPBF |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 53 Weeks, 1 Day |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 140 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 75 V | Drain Current-Max (ID) | 120 A |
Drain-source On Resistance-Max | 0.0058 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 230 W |
Pulsed Drain Current-Max (IDM) | 480 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRFB3307ZPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for high-performance applications. It offers low on-resistance and fast switching capabilities, making it suitable for power converter circuits, motor drives, and other demanding electronic systems. It is commonly used in various industries such as automotive, industrial, and consumer electronics for efficient power control and management.
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Equivalent
Some equivalent products of the IRFB3307ZPBF chip are the IRFB3307PBF, IRFB3307Z, and IRFS3307ZPBF. These chips offer similar specifications and can be used as alternatives to the IRFB3307ZPBF in various applications. -
Features
The IRFB3307ZPBF is a power MOSFET transistor. It has a drain-source voltage rating of 75 volts, a maximum continuous drain current of 120 amps, and a low on-resistance of 24 milliohms. It is designed for use in various high power applications like motor control, power supplies, and inverters. -
Pinout
The IRFB3307ZPBF is a power MOSFET transistor with a TO-220AB package. It has 3 pins - gate (G), drain (D), and source (S). It functions as a switch or amplifier for high-current applications in power electronics, such as motor control, power supplies, and inverters. -
Manufacturer
Infineon Technologies is the manufacturer of the IRFB3307ZPBF. It is a German multinational semiconductor company. -
Application Field
The IRFB3307ZPBF is a power MOSFET that can be used in various applications, including motor control, power supplies, DC-DC converters, and automotive systems. It offers low on-resistance and high performance, making it suitable for applications that require high power handling and efficiency. -
Package
The IRFB3307ZPBF chip has a TO-220AB package type, a through-hole form, and a size of approximately 10.29mm x 17.9mm x 4.83mm.
Datasheet PDF
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Product worked, but the instructions could have been clearer