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Infineon IPD110N12N3GATMA1

Trans MOSFET N-CH 120V 75A 3-Pin(2+Tab) DPAK T/R

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: IPD110N12N3GATMA1

Datasheet: IPD110N12N3GATMA1 Datasheet (PDF)

Package/Case: TO-252-3

RoHS Status:

Stock Condition: 3933 pcs, New Original

Product Type: Transistors

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.901 $1.901
10 $1.674 $16.740
30 $1.532 $45.960
100 $1.195 $119.500
500 $1.130 $565.000
1000 $1.102 $1102.000

In Stock:3933 PCS

- +

Quick Quote

Please submit RFQ for IPD110N12N3GATMA1 or email to us: Email: [email protected], we will contact you within 12 hours.

IPD110N12N3GATMA1 General Description

MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

ipd110n12n3gatma1

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Very low Q g and Q gd
  • Excellent gate charge x R DS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Application

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 12–48V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems)
  • Or-ing switches and circuit breakers in 48V systems
  • Class D audio amplifiers

Specifications

Parameter Value Parameter Value
RHoS yes PBFree yes
HalogenFree yes Manufacturer: Infineon
Product Category: MOSFET RoHS: Details
Technology: Si Mounting Style: SMD/SMT
Package / Case: TO-252-3 Transistor Polarity: N-Channel
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 120 V
Id - Continuous Drain Current: 75 A Rds On - Drain-Source Resistance: 11 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 49 nC Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W
Channel Mode: Enhancement Tradename: OptiMOS
Series: OptiMOS 3 Packaging: MouseReel
Brand: Infineon Technologies Configuration: Single
Fall Time: 8 ns Forward Transconductance - Min: 42 S
Height: 2.3 mm Length: 6.5 mm
Product Type: MOSFET Rise Time: 16 ns
Factory Pack Quantity: 2500 Subcategory: MOSFETs
Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 16 ns Width: 6.22 mm
Part # Aliases: IPD110N12N3 G SP001127808

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IPD110N12N3GATMA1 chip is a power MOSFET transistor designed for use in automotive applications. It has a voltage rating of 1200V and a current rating of 110A. This chip offers low on-resistance and high efficiency, making it suitable for use in electric vehicles and other power electronics systems.
  • Equivalent

    An equivalent product of the IPD110N12N3GATMA1 chip is the FDP110N12N3GATM.
  • Features

    The IPD110N12N3GATMA1 is a power MOSFET transistor that is low on-resistance, suitable for high-current applications. It features a voltage rating of 1200V and a current rating of 100A, making it appropriate for various power conversion and control applications.
  • Pinout

    The IPD110N12N3GATMA1 has a pin count of 8. It is a power MOSFET that has a drain, source, and gate terminal. It is designed for applications requiring high power and efficiency in a compact package.
  • Manufacturer

    The manufacturer of the IPD110N12N3GATMA1 is Infineon Technologies. It is a global semiconductor company specializing in design, production, and marketing of various semiconductor solutions. Infineon Technologies primarily operates in the fields of automotive, industrial, power, and security applications, providing innovative products and technologies to customers worldwide.
  • Application Field

    The IPD110N12N3GATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications where high power and low on-resistance are required. It can be used in areas such as power supplies, motor control systems, DC-DC converters, and other high-power switching applications.
  • Package

    The IPD110N12N3GATMA1 chip comes in a TO-252-3 package type, also known as DPAK (Plastic-Encapsulated Transistor). The form is a surface mount. Its size is compact, measuring approximately 6.5mm x 6.1mm x 2.5mm.

Datasheet PDF

Preliminary Specification IPD110N12N3GATMA1 PDF Download

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