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Infineon IKW40N120H3 48HRS

Chip for high-speed transient IGBT applications

ISO14001 ISO9001 DUNS


Mfr.Part #: IKW40N120H3

Datasheet: IKW40N120H3 Datasheet (PDF)

Package/Case: TO-247

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Product Type: Single IGBTs

Warranty: 1 Year Ovaga Warranty - Find Out More


*All prices are in USD

Qty Unit Price Ext Price
1 $4.862 $4.862
100 $4.326 $432.600
200 $4.150 $830.000
500 $3.905 $1952.500
800 $3.750 $3000.000
1000 $3.486 $3486.000

In Stock: 9,458 PCS

- +

Total : $4.862

excl. VAT

*Products eligible for online ordering ship within 1-2 business days,please contact us for exact shipping times.

Quick Quote

Please submit RFQ for IKW40N120H3 or email to us: Email: [email protected], we will contact you within 12 hours.

IKW40N120H3 General Description

The IKW40N120H3 from Infineon Technologies is a powerhouse in the world of insulated-gate bipolar transistors (IGBTs). With a voltage rating of 1200V and a current rating of 40A, this IGBT is a top choice for high-power applications that demand performance and reliability. Its low on-state voltage drop and minimal switching losses ensure efficient power conversion, reducing heat generation and maximizing energy efficiency. The high short-circuit ruggedness of the IKW40N120H3 guarantees uninterrupted operation, even in the most challenging environments



Parameter Value Parameter Value
IC max 80.0 A ICpuls max 160.0 A
IF max 40.0 A IFpuls max 160.0 A
VCE max 1200.0 V Switching Frequency max 100.0 kHz
Switching Frequency min 20.0 kHz Package TO-247-3
Switching Frequency HighSpeed3 20-100 kHz Technology IGBT HighSpeed 3
Ptot max 483.0 W


Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.


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Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.


1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.


  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IKW40N120H3 is a high-performance IGBT semiconductor chip designed for use in power electronics applications. It is capable of handling high voltages and currents, making it suitable for a wide range of industrial and automotive applications. With its advanced features and reliable performance, the IKW40N120H3 chip is a popular choice for power conversion and motor control systems.
  • Equivalent

    The equivalent products of the IKW40N120H3 chip are the Infineon IHW40N120R3, the Vishay VS-SPB40-12, and the STMicroelectronics STW40N120K3. These products are all power MOSFETs with similar specifications and performance characteristics.
  • Features

    IKW40N120H3 is a high-speed IGBT module with integrated anti-parallel diode. It has a low VCEsat for reduced conduction losses and a fast switching speed for improved efficiency. It also features high input impedance, low noise, and high ruggedness, making it ideal for use in various power electronic applications.
  • Pinout

    The IKW40N120H3 is a 40-pin insulated-gate bipolar transistor (IGBT) module. It is primarily used for high-speed power switching applications in various electronic devices, such as electric vehicles and industrial motor control systems. The pin count is 40, and the functions include power switching and amplification.
  • Manufacturer

    Infineon Technologies is the manufacturer of IKW40N120H3. It is a German semiconductor company that specializes in power management, RF power, sensor solutions, and automotive electronics. The company is a leading player in the global semiconductor industry, providing innovative solutions for a wide range of connected applications.
  • Application Field

    IKW40N120H3 is a high-efficiency MOSFET transistor commonly used in applications such as motor control, power supplies, renewable energy inverters, and industrial drives. It is suitable for high power density applications that require high-speed switching and low conduction losses, making it ideal for use in a wide range of power electronics systems.
  • Package

    The IKW40N120H3 chip is packaged in a TO-247 form with a size of 15.7mm x 20.0mm.

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