This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount!

FZ1600R12KF4

Insulated Gate Bipolar Transistor with 1600A of current and 1200V of voltage

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: FZ1600R12KF4

Datasheet: FZ1600R12KF4 Datasheet (PDF)

Package/Case: IHM

Product Type: IGBT Modules

RoHS Status:

Stock Condition: 9,631 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for FZ1600R12KF4 or email to us: Email: [email protected], we will contact you within 12 hours.

FZ1600R12KF4 General Description

The FZ1600R12KF4 is a power module designed for use in high-power applications such as industrial drives and renewable energy systems. It features a voltage rating of 1200V and a current rating of 1600A, making it suitable for high-power and high-voltage applications.This power module utilizes IGBT (Insulated Gate Bipolar Transistor) technology, which provides high efficiency and fast switching speeds. It also features a built-in temperature sensor to help monitor and control the module's temperature, ensuring safe and reliable operation.The FZ1600R12KF4 is designed for easy installation and maintenance, with robust construction and reliable performance. It is built to withstand harsh environmental conditions, making it suitable for a wide range of applications.

Features

  • 1600A rated current
  • 1200V voltage rating
  • IGBT module type
  • Low on-state voltage drop
  • High short circuit capability
  • Integrated temperature sensor
  • Compact and lightweight design
  • High reliability and performance
  • Designed for power electronic applications

Application

  • Renewable energy systems
  • Industrial motor drives
  • Electric vehicles
  • Power supplies
  • Uninterruptible power supplies (UPS)
  • Welding equipment
  • High power converters
  • Induction heating systems
  • Energy storage systems
  • Solar inverters

Specifications

Parameter Value Parameter Value
Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.7 V
Continuous Collector Current at 25 C 1.6 kA Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 10 kW Package / Case IHM
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Height 38 mm
Length 140 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 1 Subcategory IGBTs
Technology Si

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FZ1600R12KF4 chip is a high-power module used in power electronics systems. It is designed for applications that require high voltage and high power. The chip's compact design and advanced features make it suitable for various industrial and commercial applications, such as motor drives, renewable energy systems, and electric vehicle charging stations.
  • Equivalent

    Some equivalent products of the FZ1600R12KF4 chip include the APT140F120B and PVD2214NPbF.
  • Features

    The FZ1600R12KF4 is a power transistor module with a voltage rating of 1200V and a current rating of 1600A. It is designed for use in high-power applications, such as electric vehicles or industrial inverters. The module features low on-resistance, low thermal resistance, and high short circuit withstand capability.
  • Pinout

    The pin count of the FZ1600R12KF4 is 7. It is a high-power, 1600A insulated gate bipolar transistor (IGBT) module used in power electronic applications. Some of its functions include high-speed switching, low power dissipation, and high current capabilities.
  • Manufacturer

    Infineon Technologies is the manufacturer of the FZ1600R12KF4. It is a multinational semiconductor and electronics company primarily involved in power management, sensor and security solutions.
  • Application Field

    The FZ1600R12KF4 is a power module designed for use in various applications including industrial drives, wind power, power supplies, and traction applications. It is specifically suited for high power and high voltage applications where reliability and efficiency are essential.
  • Package

    The FZ1600R12KF4 chip has a package type of IGBT Module, a form of rectangular, and a size of approximately 1600 A.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • FDD8647L

    FDD8647L

    Onsemi

    52A N-channel MOSFET transistor, 40V voltage ratin...

  • BFT92,215

    BFT92,215

    Nxp

    Wideband transistor BFT92,215 operating at 5 GHz w...

  • FGH60N60

    FGH60N60

    Nxp

    Enjoy hassle-free returns on the FGH60N60SMD IGBT,...

  • SI9801DY

    SI9801DY

    Vishay

    MOSFET capable of handling 20V, 4.5/4A, and 2W

  • RSR025P03FRA

    RSR025P03FRA

    Rohm Semiconductor

    Power MOSFET with low ON-resistance for versatile ...

  • 2N7002NXAKR

    2N7002NXAKR

    Nexperia

    Maximum voltage rating of 60V