This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

FGH40T120SQDNL4

GBT Transistor 1200V 160A with N-Channel

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: FGH40T120SQDNL4

Datasheet: FGH40T120SQDNL4 Datasheet (PDF)

Package/Case: TO-247-4

Product Type: IGBT Transistors

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for FGH40T120SQDNL4 or email to us: Email: [email protected], we will contact you within 12 hours.

FGH40T120SQDNL4 General Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.

Features

  • Extremely Efficient Trench with Field Stop Technology• TJmax = 175°C• Soft Fast Reverse Recovery Diode• Optimized for High Speed Switching• These are Pb−Free Devices

Application

  • Solar inverterUPSWelding

Specifications

Parameter Value Parameter Value
Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-4
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.78 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 160 A
Pd - Power Dissipation 454 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series FGH40T120SQDNL4
Brand onsemi Gate-Emitter Leakage Current 200 nA
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FGH40T120SQDNL4 chip is a power semiconductor device designed for use in electronic applications. It is a Fast IGBT (Insulated Gate Bipolar Transistor) module with a high voltage and current rating. The chip offers low switching and conduction losses, making it suitable for high-performance power conversion applications like motor drives, inverters, and power supplies.
  • Features

    The FGH40T120SQDNL4 is a semiconductor transistor module that is designed for use in high power applications. It has a current rating of 40A and a voltage rating of 1200V.
  • Pinout

    The FGH40T120SQDNL4 is a 1200V IGBT (Insulated Gate Bipolar Transistor) module. It has a 7-pin configuration, consisting of a gate, collector, emitter, and several auxiliary pins for additional features such as temperature sensing and gate control.
  • Manufacturer

    The manufacturer of the FGH40T120SQDNL4 is Infineon Technologies. It is a German semiconductor manufacturer that specializes in developing and producing various types of semiconductors and related system solutions.
  • Application Field

    The FGH40T120SQDNL4 is a power semiconductor module suitable for a wide range of applications including industrial motors, inverters, UPS (Uninterruptible Power Supply) systems, and renewable energy systems such as solar and wind power.
  • Package

    The FGH40T120SQDNL4 chip is packaged in a TO-247 form with dimensions of approximately 15mm x 7.7mm x 4.7mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • MJE5731AG

    MJE5731AG

    Onsemi

    The MJE5731AG is a PNP transistor suitable for gen...

  • MJF18008G

    MJF18008G

    Onsemi

    8A 450V 45W NPN Bipolar Transistors

  • MJ15004G

    MJ15004G

    Onsemi

    The MJ15003 and MJ15004 serve as power transistors...

  • MJ21195G

    MJ21195G

    Onsemi

    ROHS compliant TO-204AA transistors with 250V volt...

  • MJ21196G

    MJ21196G

    Onsemi

    Bipolar NPN Transistor, 250V, 16A

  • PD55015-E

    PD55015-E

    STMicroelectronics, Inc

    RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W PowerSO-10...