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FGH40T65UPD
N-Channel Trans IGBT Chip Encased in TO-247 Tube
Brands: Onsemi
Mfr.Part #: FGH40T65UPD
Datasheet: FGH40T65UPD Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $6.119 | $6.119 |
| 200 | $2.369 | $473.800 |
| 450 | $2.285 | $1028.250 |
| 900 | $2.245 | $2020.500 |
In Stock:9458 PCS
FGH40T65UPD General Description
FGH40T65UPD is a power semiconductor module designed for use in high power applications such as motor control, power supplies, and renewable energy systems. It is produced by Fairchild Semiconductor, a leading semiconductor manufacturer known for delivering high-quality and reliable products.The FGH40T65UPD module features a maximum power dissipation of 200 W and a maximum operating temperature of 150°C, making it suitable for use in demanding industrial environments. It includes an insulated gate bipolar transistor (IGBT) and a diode, providing both power switching and freewheeling capabilities in a single package.This module has a voltage rating of 650 V, a current rating of 40 A, and a switching frequency of up to 20 kHz, making it ideal for high frequency switching applications. It also features an industry-standard module package with screw terminals for easy and secure connections.The FGH40T65UPD offers high power density and efficiency, enabling compact and energy-efficient designs. It is designed for ease of use and integration, with compatibility with standard gate drive circuits and mounting hardware.
Features
Application
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247 |
| Mounting Style | Through Hole | Collector- Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 2.1 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
| Continuous Collector Current at 25 C | 80 A | Pd - Power Dissipation | 268 W |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Series | FGH40T65UPD | Brand | onsemi / Fairchild |
| Gate-Emitter Leakage Current | 400 nA | Product Type | IGBT Transistors |
| Factory Pack Quantity | 450 | Subcategory | IGBTs |
| Unit Weight | 0.225401 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FGH40T65UPD is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power electronics applications. It offers low conduction and switching losses, high efficiency, and reliability. With a voltage rating of 650V and a current rating of 40A, this chip is suitable for various industrial and commercial applications requiring high power handling capabilities.
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Equivalent
Some equivalent products of the FGH40T65UPD chip are FGH40N60UF, FGH40N60SMD, and FGH40N60SF. These chips are part of the NPT Series and offer similar performance and features. -
Features
FHG40T65UPD is a Insulated Gate Bipolar Transistor (IGBT) module with a current rating of 40A and a voltage rating of 650V. It features a high short-circuit withstand time, low stray inductance, and a compact design suitable for various applications in motor drives, solar inverters, and welding equipment. -
Pinout
FGH40T65UPD is a 4-pin IGBT module, with collector, emitter, and gate terminals, as well as a base plate. It is commonly used in power electronics applications for high voltage and high current switching. -
Manufacturer
FGH40T65UPD is manufactured by Fairchild Semiconductor, which is a global supplier of power semiconductors. Fairchild Semiconductor specializes in developing innovative technology solutions for power efficiency, energy management, and mobile power. With a focus on sustainability and performance, the company serves a wide range of industries including automotive, industrial, and consumer electronics. -
Application Field
FGH40T65UPD is commonly used in automotive electronic systems, power supplies, motor drives, industrial applications, and renewable energy systems. It is suitable for high-frequency switching applications due to its fast switching speeds and low on-state resistance. -
Package
The FGH40T65UPD chip is a power MOSFET in a TO-247 package. It has a form factor of a metal-oxide-semiconductor field-effect transistor and measures 10.4mm x 15.6mm x 4.6mm.
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