FDV305N
This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.
Brands: Onsemi
Mfr.Part #: FDV305N
Datasheet: FDV305N Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
5 | $0.165 | $0.825 |
50 | $0.118 | $5.900 |
150 | $0.097 | $14.550 |
500 | $0.072 | $36.000 |
3000 | $0.061 | $183.000 |
6000 | $0.054 | $324.000 |
In Stock:9458 PCS
FDV305N General Description
This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.
Features
- 0.9 A, 20 V
- RDS(ON) = 220 mΩ @ VGS = 4.5 V
- RDS(ON) = 300 mΩ @ VGS = 2.5 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremelylow RDS(ON)
Application
- This product is general usage and suitable for many different applications.
- Load Switch
- Battery Protection
- Power Management
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 900 mA | Rds On - Drain-Source Resistance | 164 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Qg - Gate Charge | 1.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDV305N | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 7 ns |
Forward Transconductance - Min | 3 S | Height | 1.2 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 7 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 8 ns | Typical Turn-On Delay Time | 4.5 ns |
Width | 1.3 mm | Part # Aliases | FDV305N_NL |
Unit Weight | 0.000282 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDV305N is a high-speed N-channel MOSFET transistor designed for use in switching applications in power management circuits. It has a low threshold voltage and high speed switching capabilities, making it ideal for use in various power electronic applications.
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Equivalent
The equivalent products of FDV305N chip are FDP025N06B, STP55NE06, IPD50N06S4-08, and IRF540NSTRLPBF. -
Features
1. N-channel MOSFET with low on-resistance 2. High current handling capability of 75A 3. Low gate charge for efficient switching 4. Wide voltage range: 30V 5. Suitable for a variety of applications including power management and motor control -
Pinout
FDV305N is a N-channel MOSFET with a pin count of 3. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. Its main function is to control the flow of current between the Drain and Source pins by applying a voltage to the Gate pin. -
Manufacturer
FDV305N is manufactured by Toshiba Semiconductor. Toshiba Semiconductor is a Japanese multinational semiconductor and electronics company. They specialize in the development and manufacturing of a wide range of electronic components, including integrated circuits, memory devices, and power transistors. Toshiba Semiconductor is known for its high-quality and innovative products in the electronics industry. -
Application Field
Some application areas of FDV305N include industrial process control, medical equipment, automotive systems, renewable energy systems, and consumer electronics. The high efficiency and fast switching characteristics of FDV305N make it suitable for various power management applications requiring low power dissipation and compact design. -
Package
The FDV305N chip comes in an SOT-23 package, with a surface mount form. The size of the chip is 2.9mm x 1.3mm x 1.0mm, making it compact and suitable for use in various electronic devices.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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