Infineon BSC030N08NS5ATMA1
Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC030N08NS5ATMA1
Datasheet: BSC030N08NS5ATMA1 Datasheet (PDF)
Package/Case: TDSON-8
Product Type: Transistors
BSC030N08NS5ATMA1 General Description
MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Features
- Optimized for synchronous rectification
- Ideal for high switching frequency
- Output capacitance reduction of up to 44%
- R DS(on) reduction of up to 44%
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Low voltage overshoot
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
RHoS | yes | PBFree | yes |
HalogenFree | yes | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, R-PDSO-F5 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 65 Weeks | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 250 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 80 V |
Drain Current-Max (ID) | 22 A | Drain-source On Resistance-Max | 0.003 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F5 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 400 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | FLAT |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSC030N08NS5ATMA1 is a power MOSFET chip designed for high-efficiency power applications. It features a low on-resistance and low gate charge, allowing for reduced power losses and improved overall performance. The chip is commonly used in power converters, motor control systems, and other applications that demand high power handling capabilities.
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Equivalent
The equivalent products of the BSC030N08NS5ATMA1 chip are BSC030N08NS5G, BSC032N08NS5G, BSC034N08NS5ATMA1, and BSC034N08NS5G. -
Features
The BSC030N08NS5ATMA1 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 80V, a drain current (ID) of 30A, and a low on-resistance (RDS(on)) of 3.5mΩ. It is designed for high power applications, providing efficient switching and thermal performance. -
Pinout
The BSC030N08NS5ATMA1 is a MOSFET with a pin count of 8. It is designed for use in power applications and offers low on-state resistance and high current handling capabilities. This MOSFET can be used in a variety of applications such as power supplies, motor control, and lighting systems. -
Manufacturer
Infineon Technologies is the manufacturer of the BSC030N08NS5ATMA1. It is a multinational semiconductor company specializing in power semiconductors, sensors, microcontrollers, and other related products. -
Application Field
The BSC030N08NS5ATMA1 is a power MOSFET transistor designed for switching applications. It can be used in various areas such as power supplies, motor control, lighting systems, and automotive electronics where high switching efficiency and low on-resistance are needed. -
Package
The BSC030N08NS5ATMA1 chip is packaged in a Power-SO8 form. It has a size of approximately 5.65mm x 6.18mm.
Datasheet PDF
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