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Infineon BSC030N08NS5ATMA1

Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: BSC030N08NS5ATMA1

Datasheet: BSC030N08NS5ATMA1 Datasheet (PDF)

Package/Case: TDSON-8

Product Type: Transistors

RoHS Status:

Stock Condition: 2319 pcs, New Original

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Quick Quote

Please submit RFQ for BSC030N08NS5ATMA1 or email to us: Email: [email protected], we will contact you within 12 hours.

BSC030N08NS5ATMA1 General Description

MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

bsc030n08ns5atma1

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44% 
  • R DS(on) reduction of up to 44%
  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Specifications

Parameter Value Parameter Value
RHoS yes PBFree yes
HalogenFree yes Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 65 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 250 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 22 A Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F5
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 5
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A Surface Mount YES
Terminal Finish TIN Terminal Form FLAT
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BSC030N08NS5ATMA1 is a power MOSFET chip designed for high-efficiency power applications. It features a low on-resistance and low gate charge, allowing for reduced power losses and improved overall performance. The chip is commonly used in power converters, motor control systems, and other applications that demand high power handling capabilities.
  • Equivalent

    The equivalent products of the BSC030N08NS5ATMA1 chip are BSC030N08NS5G, BSC032N08NS5G, BSC034N08NS5ATMA1, and BSC034N08NS5G.
  • Features

    The BSC030N08NS5ATMA1 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 80V, a drain current (ID) of 30A, and a low on-resistance (RDS(on)) of 3.5mΩ. It is designed for high power applications, providing efficient switching and thermal performance.
  • Pinout

    The BSC030N08NS5ATMA1 is a MOSFET with a pin count of 8. It is designed for use in power applications and offers low on-state resistance and high current handling capabilities. This MOSFET can be used in a variety of applications such as power supplies, motor control, and lighting systems.
  • Manufacturer

    Infineon Technologies is the manufacturer of the BSC030N08NS5ATMA1. It is a multinational semiconductor company specializing in power semiconductors, sensors, microcontrollers, and other related products.
  • Application Field

    The BSC030N08NS5ATMA1 is a power MOSFET transistor designed for switching applications. It can be used in various areas such as power supplies, motor control, lighting systems, and automotive electronics where high switching efficiency and low on-resistance are needed.
  • Package

    The BSC030N08NS5ATMA1 chip is packaged in a Power-SO8 form. It has a size of approximately 5.65mm x 6.18mm.

Datasheet PDF

Preliminary Specification BSC030N08NS5ATMA1 PDF Download

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