Orders Over
$5000FDPF5N50UT
N-Channel FRFET MOSFET: FDPF5N50UT, a cutting-edge semiconductor device designed for superior performance in 500V applications
RoHS Status:
Stock Condition: 7,278 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FDPF5N50UT General Description
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
- RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A
- Low gate charge ( Typ. 11nC)
- Low Crss ( Typ. 5pF)
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Application
- This product is general usage and suitable for many different applications.
- LCD / LED / PDP TV
- Lighting
- Uninterruptible Power Supplies
- AC-DC Power Supplies
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 4 A |
Rds On - Drain-Source Resistance | 1.65 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 11 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 28 W | Channel Mode | Enhancement |
Tradename | UniFET FRFET | Series | FDPF5N50UT |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 20 ns | Forward Transconductance - Min | 4.8 S |
Height | 16.07 mm | Length | 10.36 mm |
Product Type | MOSFET | Rise Time | 21 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 27 ns |
Typical Turn-On Delay Time | 14 ns | Width | 4.9 mm |
Unit Weight | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDPF5N50UT is a high-voltage N-channel power MOSFET designed for use in switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 5A. This chip is suitable for use in power supplies, motor control, and other high-voltage applications where efficient switching is required.
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Equivalent
The equivalent products of FDPF5N50UT chip are IRF840, IRF830, IRF3205, and IRF2807. These chips are all power MOSFETs with similar specifications and functions, which can be used as substitutes for the FDPF5N50UT chip in various applications. -
Features
1. VDS = 500 V 2. ID = 4.5 A 3. RDS(on) = 2.5 ohms 4. Fast switching speed 5. Low on-resistance 6. High input impedance 7. Temperature coefficient typically 0.17% per degree Celsius 8. TO-220F package for easy mounting and heat dissipation. -
Pinout
The FDPF5N50UT is a MOSFET with a pin count of 3 (Gate, Drain, Source). It is used for high-power switching applications due to its low on-resistance and high current handling capability. -
Manufacturer
FDPF5N50UT is manufactured by Fairchild Semiconductor, an American company that specializes in the development of power semiconductor and integrated circuit solutions. Fairchild Semiconductor was founded in 1957 and is now a subsidiary of ON Semiconductor. The FDPF5N50UT is a Power MOSFET designed for use in power supply and lighting applications. -
Application Field
The FDPF5N50UT is commonly used in applications such as switching power supplies, motor control circuits, and lighting applications. It can also be used in electronic ballasts, inverters, and general purpose power switching applications. -
Package
The FDPF5N50UT chip is a MOSFET transistor with a TO-220F package type. It is in a through hole form, which means it has leads that are inserted into holes on a circuit board. The size of the chip is approximately 10.5 mm x 15.0 mm x 4.8 mm.
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