Orders Over
$5000FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -1.6A, 115mΩ
Brands: Onsemi
Mfr.Part #: FDN338P
Datasheet: FDN338P Datasheet (PDF)
Package/Case: SSOT-3
RoHS Status:
Stock Condition: 7,300 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
10 | $0.058 | $0.580 |
100 | $0.047 | $4.700 |
300 | $0.042 | $12.600 |
3000 | $0.035 | $105.000 |
6000 | $0.032 | $192.000 |
9000 | $0.030 | $270.000 |
In Stock: 7,300 PCS
FDN338P General Description
This P-Channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- –1.6 A, –20 V
- RDS(ON)= 115 mΩ @ VGS = –4.5 V
- RDS(ON) = 155 mΩ @ VGS = –2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- SuperSOT™ -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint
Application
- This product is general usage and suitable for many different applications.
- Battery Management
- Load Switch
- Battery Protection
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SSOT-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1.6 A | Rds On - Drain-Source Resistance | 115 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 6.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDN338P | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 11 ns |
Forward Transconductance - Min | 6 S | Height | 1.12 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.4 mm | Part # Aliases | FDN338P_NL |
Unit Weight | 0.001058 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDN338P chip is a power MOSFET transistor designed for application in high-performance switch mode power supplies (SMPS) and DC-DC converters. It features low on-resistance, fast switching speeds, and a compact package. The chip's specifications make it suitable for various power control and conversion applications, such as mobile devices, laptops, LED lighting, and more.
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Equivalent
There are no direct equivalent products to the FDN338P chip. However, similar chips that you can consider as alternatives are the FDN338PZ, FDN338PNT, NDS9410A, and NDS9410P. -
Features
FDN338P is a P-channel MOSFET transistor that offers low on-resistance and high-speed switching capabilities. It has a maximum drain current of 2.8A, a gate-source voltage of -20V, and a drain-source voltage of -20V. This transistor is commonly used in power management applications and can operate at temperatures up to 150°C. -
Pinout
The FDN338P is a Dual N-Channel PowerTrench MOSFET. It has 8 pins and the functions of these pins include gate control, source connections, drain connections, as well as voltage and ground connections. -
Application Field
The FDN338P is a power MOSFET transistor that is commonly used in a variety of applications such as power management circuits, power supplies, battery charging systems, motor control circuits, and automotive electronics. It is designed to handle high currents and voltages and is suitable for both low-side and high-side switching operations. -
Package
The FDN338P chip is available in a small surface-mount package known as a DFN (Dual Flat No-Lead) package. Its form factor is rectangular with no visible leads, and its size is approximately 3mm x 3mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products