This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

FDG8842CZ

Mosfet Array 30V, 25V 750mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

ISO14001 ISO9001 DUNS

Brands: onsemi

Mfr.Part #: FDG8842CZ

Datasheet: FDG8842CZ Datasheet (PDF)

Package/Case: SOT-323-6

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for FDG8842CZ or email to us: Email: [email protected], we will contact you within 12 hours.

FDG8842CZ General Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Features

  • Q1: N-Channel
    Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
    Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
  • Q2: P-Channel
    Max rDS(on) = 1.1Ω at VGS = -4.5V, ID = -0.41A
    Max rDS(on) = 1.5Ω at VGS = -2.7V, ID = -0.25A
  • Very low level gate drive requirements allowing directoperation in 3V circuits(VGS(th) <1.5V)
  • Very small package outline SC70-6
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

Parameter Value Parameter Value
Manufacturer: onsemi Product Category: MOSFET
RoHS: Details Technology: Si
Mounting Style: SMD/SMT Package / Case: SOT-323-6
Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V, 25 V Id - Continuous Drain Current: 750 mA
Rds On - Drain-Source Resistance: 400 mOhms, 1.1 Ohms Vgs - Gate-Source Voltage: - 8 V, + 12 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V Qg - Gate Charge: 1.03 nC, 1.2 nC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 360 mW Channel Mode: Enhancement
Tradename: PowerTrench Series: FDG8842CZ
Packaging: MouseReel Brand: onsemi / Fairchild
Configuration: Dual Fall Time: 1 ns, 16 ns
Height: 1.1 mm Length: 2 mm
Product: MOSFET Small Signal Product Type: MOSFET
Rise Time: 1 ns, 16 ns Factory Pack Quantity: 3000
Subcategory: MOSFETs Transistor Type: 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time: 9 nS, 35 nS Typical Turn-On Delay Time: 4 nS, 6 nS
Width: 1.25 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FDG8842CZ is a high-frequency, low-loss, and low-voltage dual SPDT switch designed for RF applications. It offers excellent performance with low insertion loss and high isolation, making it ideal for wireless infrastructure, cellular base stations, and other high-frequency communication systems. The chip is housed in a compact 2x2mm QFN package for easy integration into RF circuit designs.
  • Equivalent

    The equivalent products of FDG8842CZ chip are H5274S, FGD1M30G3E, and PHT12N06LT. These chips have similar specifications and can be used as replacements for the FDG8842CZ in various applications.
  • Features

    FDG8842CZ features a large capacity of 8.8 cu. ft., easy-to-clean fingerprint resistant stainless steel finish, flexible storage options with adjustable shelves, and LED lighting for better visibility. This model also includes a built-in ice maker and water dispenser for added convenience.
  • Pinout

    The FDG8842CZ is a 6-pin N-channel MOSFET with a dual gate configuration. It is used for high-speed switching applications in digital and analog circuits. Pin functions include source, drain, and two gates. It has a compact package size suitable for small electronic devices.
  • Manufacturer

    The manufacturer of the FDG8842CZ is Frigidaire, a multinational company specializing in home appliances. They are known for producing a wide range of products including refrigerators, dishwashers, air conditioners, and more. Frigidaire is a subsidiary of Electrolux, a Swedish multinational home appliance manufacturer.
  • Application Field

    The FDG8842CZ is a dual N-channel enhancement mode MOSFET designed for high performance applications such as power management, load switching, and battery protection in portable electronics, industrial control systems, and automotive applications. It is also suitable for use in motor control, LED drivers, and general purpose switching applications.
  • Package

    The FDG8842CZ chip comes in a surface-mount package type called DFN (Dual Flat No-Lead), has a form factor of 1.6mm x 1.6mm, and a size of 4-pin.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • FDP032N08

    FDP032N08

    Onsemi

    75V 235A N-Ch MOSFET PowerTrench TO220

  • 2SK2225-E

    2SK2225-E

    Renesas

    MOSFET Power Transistor 2SK2225-E: Lead-Free, TO-3...

  • FDP150N10

    FDP150N10

    ON Semiconductor, LLC

    MOSFET 100V N-Channel PowerTrench

  • SCT30N120

    SCT30N120

    Stmicroelectronics

    N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole H

  • FDP8896

    FDP8896

    Onsemi

    The FDP8896 is a 3-pin transistor with N-channel M...

  • FDPF045N10A

    FDPF045N10A

    ON Semiconductor, LLC

    N-Channel 100 V 67A (Tc) 43W (Tc) Through Hole TO-...