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DMN65D8L-7
DMN65D8L: 60 V 3 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
Brands: Diodes Incorporated
Mfr.Part #: DMN65D8L-7
Datasheet: DMN65D8L-7 Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 20 | $0.018 | $0.360 |
| 200 | $0.015 | $3.000 |
| 600 | $0.014 | $8.400 |
| 3000 | $0.013 | $39.000 |
| 9000 | $0.012 | $108.000 |
| 21000 | $0.012 | $252.000 |
In Stock: 9,458 PCS
DMN65D8L-7 General Description
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 115mA, 10V 310mA Ta -55°C~150°C TJ MOSFET N-CH 60V 310MA SOT23
Features
Channel ModeEnhancement
PdPower Dissipation370 mW
ID (drain current)310 mA
Rds-On-Drain-Source-Resistance4 Ohms
Fall-Time7.3n
Rise-Time2.8 ns
Transistor Type1 N-Channel
Package-CaseSOT-23-3
Mounting-StyleSMD/SMT
Transistor PolarityN-Channel
Application
: Diodes Incorporated FETs Single DMN65D8L-7 can be used in a wide range of applications such as power management, motor control, audio amplifiers, power supplies, digital signal processing and switching applications. It is suitable for use in industrial, automotive and consumer applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Diodes Incorporated | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 310 mA |
| Rds On - Drain-Source Resistance: | 3 Ohms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V | Qg - Gate Charge: | 870 pC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 540 mW | Channel Mode: | Enhancement |
| Series: | DMN63 | Packaging: | MouseReel |
| Brand: | Diodes Incorporated | Configuration: | Single |
| Fall Time: | 7.3 ns | Forward Transconductance - Min: | 80 mS |
| Product Type: | MOSFET | Rise Time: | 2.8 ns |
| Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 12.6 ns |
| Typical Turn-On Delay Time: | 2.7 ns |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The DMN65D8L-7 is a power MOSFET chip designed for high efficiency and performance in power management applications. It has a low on-resistance and is capable of handling heavy loads while dissipating minimal heat. This chip is suitable for use in a variety of electronic devices, including power supplies, motor control, and LED lighting systems.
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Equivalent
The equivalent products of DMN65D8L-7 chip are FDS9926A and DMN26D0LFB4L. -
Features
- N-channel MOSFET with a low on-resistance of 9.3mOhm - 650V breakdown voltage for high voltage applications - 28A continuous drain current for high power handling capabilities - Designed for use in power supplies, motor control, and other high voltage applications - DFN packaging for compact and efficient mounting options -
Pinout
DMN65D8L-7 is a N-channel trench MOSFET with a pin count of 3. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. This MOSFET is typically used as a switching device in power management applications due to its high efficiency and low on-resistance. -
Manufacturer
DMN65D8L-7 is manufactured by Panasonic Corporation. Panasonic is a Japanese multinational electronics corporation that produces a wide range of products, including consumer electronics, home appliances, and industrial equipment. They are known for their high-quality and innovative technology across various industries. -
Application Field
The DMN65D8L-7 is commonly used in high-power RF applications such as cellular base stations, radar systems, and satellite communications. Its high power handling capabilities and efficient design make it ideal for applications requiring high linearity and reliability. -
Package
The DMN65D8L-7 chip is a surface-mount package type with a form of a transistor. It measures 5mm x 6mm in size.
We provide high quality products, thoughtful service and after sale guarantee
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