TOSHIBA SSM3J331R,LF
Product SSM3J331R,LF is a P-channel silicon MOSFET with a voltage rating of 20V and a current handling capability of 4A
Brands: Toshiba
Mfr.Part #: SSM3J331R,LF
Datasheet: SSM3J331R,LF Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
5 | $0.136 | $0.680 |
50 | $0.109 | $5.450 |
150 | $0.097 | $14.550 |
500 | $0.083 | $41.500 |
3000 | $0.076 | $228.000 |
6000 | $0.072 | $432.000 |
In Stock:9458 PCS
SSM3J331R,LF General Description
The SSM3J331R,LF is a P-channel MOSFET transistor manufactured by Toshiba. It has a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -2.7A. The Rds(on) (on-state resistance) of this transistor is typically 95mΩ at Vgs of -4.5V, making it ideal for low voltage applications.This MOSFET transistor is housed in a small, ultra-thin VSON package, which allows for space-saving and efficient PCB layouts. It is designed for use in power management and load switching applications in portable devices, tablets, smartphones, and other consumer electronics.The SSM3J331R,LF features a low threshold voltage (Vth) of -1.5V, ensuring efficient operation in battery-operated devices. It also has a fast switching speed, reducing power loss and improving overall system efficiency.
Features
- Low on-resistance
- High-speed switching
- Low threshold voltage
- Enhanced ESD protection
- Small package size
- RoHS compliant
Application
- Mobile phones
- Tablets
- Portable media players
- Digital cameras
- Portable gaming devices
- Portable medical devices
- Personal navigation devices
- Wearable devices
- Wireless communication devices
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4 A | Rds On - Drain-Source Resistance | 150 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 10.4 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1 W |
Channel Mode | Enhancement | Tradename | U-MOSVI |
Series | SSM3J331 | Brand | Toshiba |
Configuration | Single | Height | 0.9 mm |
Length | 2.9 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Width | 1.3 mm |
Unit Weight | 0.000282 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SSM3J331R,LF is a chip used in electronic devices. It is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. The chip is compact and efficient, making it suitable for use in various portable devices, such as smartphones, tablets, and laptops. It provides reliable power control and helps optimize battery consumption in these devices, resulting in improved overall performance.
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Features
The SSM3J331R,LF is a power MOSFET designed for use in power management applications. It has a low on-resistance, high current capacity, and low gate charge. Additionally, it features a small package size for space-saving designs and high efficiency for improved overall system performance. -
Pinout
The SSM3J331R,LF is a dual P-channel MOSFET. It has 6 pins in total: 3 pins for each P-channel MOSFET. The pins functions include source, drain, and gate for each P-channel MOSFET. -
Manufacturer
The manufacturer of the SSM3J331R,LF is Toshiba Corporation. Toshiba is a multinational conglomerate company that specializes in various industries, including electronics, power systems, and social infrastructure. They produce a wide range of electronic components, including semiconductors, which the SSM3J331R,LF is a part of. -
Application Field
The SSM3J331R,LF is a small signal MOSFET designed for use in various applications such as mobile devices, audio equipment, and power management circuits. It can be used in switching applications, low noise amplifiers, and voltage regulators, making it suitable for a wide range of electronic devices. -
Package
The SSM3J331R,LF chip is found in a SOT-723 package type. The dimensions of the chip are typically 2.0mm x 1.2mm x 0.5mm.
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