Infineon BSC028N06NSTATMA1
Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC028N06NSTATMA1
Datasheet: BSC028N06NSTATMA1 Datasheet (PDF)
Package/Case: TDSON-8
RoHS Status:
Stock Condition: 2588 pcs, New Original
Product Type: Other Components
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.424 | $1.424 |
10 | $1.216 | $12.160 |
30 | $1.099 | $32.970 |
100 | $0.970 | $97.000 |
500 | $0.913 | $456.500 |
1000 | $0.886 | $886.000 |
In Stock:2588 PCS
BSC028N06NSTATMA1 General Description
N-Channel 60 V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7
Features
- Low RDS(on)
- Optimized for synchronous rectification
- Enhanced 175°C capability in SuperSO8
- Longer life time
- Highest efficiency and power density
- Highest system reliability
- Thermal robustness
Application
- Motor drives
- Server
- Telecom
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | Infineon | Product Category: | MOSFET |
RoHS: | Y | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | PG-TDSON-8 |
Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 2.8 mOhms | Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Vgs - Gate-Source Voltage: | 10 V | Qg - Gate Charge: | 37 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 83 W | Configuration: | Single |
Channel Mode: | Enhancement | Packaging: | Reel |
Transistor Type: | 1 N-Channel | Brand: | Infineon Technologies |
Forward Transconductance - Min: | 50 S | Fall Time: | 8 ns |
Product Type: | MOSFET | Rise Time: | 38 ns |
Factory Pack Quantity: | 5000 | Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 19 ns | Typical Turn-On Delay Time: | 11 ns |
Part # Aliases: | BSC028N06NST SP001666498 | Tags | BSC028N06N, BSC028N06, BSC028, BSC02, BSC0, BSC |
RHoS | yes | PBFree | yes |
HalogenFree | yes | Series | OptiMOS™ |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 3.3V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3375 pF @ 30 V | Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8-7 | Package / Case | 8-PowerTDFN |
Base Product Number | BSC028 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSC028N06NSTATMA1 chip is a N-channel power MOSFET developed by Infineon Technologies. It is designed for low voltage automotive applications, such as powertrain systems and body electronics. The chip offers high efficiency and low on-resistance, making it suitable for high-current applications. It also includes a built-in protective feature to prevent damage from overcurrent and overtemperature conditions.
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Equivalent
The equivalent products of the BSC028N06NSTATMA1 chip include the BSC027N06NSTATMA1, BSC029N06NSTATMA1, and BSC030N06NSTATMA1 chips, all of which are manufactured by Infineon Technologies. -
Features
The BSC028N06NSTATMA1 is a N-channel enhancement mode power MOSFET. It features a drain-source voltage rating of 60 volts and a continuous drain current of 74 amperes. It has a low on-resistance of 2.8 milliohms, making it suitable for high current applications. The MOSFET also offers a robust design and excellent thermal performance. -
Pinout
The BSC028N06NSTATMA1 is a power MOSFET with a TO-252 package. It has three pins: Gate, Drain, and Source. The Gate pin controls the flow of current between the Drain and Source pins. The Drain pin carries the load current, and the Source pin is connected to the source of the MOSFET's internal transistor. -
Manufacturer
Infineon Technologies is the manufacturer of the BSC028N06NSTATMA1. It is a German semiconductor company specializing in power semiconductors, microcontrollers, and sensors. -
Application Field
The BSC028N06NSTATMA1 is a power MOSFET commonly used in various applications such as power supplies, motor controls, automotive systems, and industrial equipment. It is ideally suited for high current applications due to its low on-resistance and high efficiency. -
Package
The BSC028N06NSTATMA1 chip is a power MOSFET with a TO-220 package type. It has a through-hole form and a size of TO-220-3-1.
Datasheet PDF
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