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ST STP6NK60Z
N-Channel 600 V 6A (Tc) 110W (Tc) Through Hole TO-220
Brands: STMicroelectronics, Inc
Mfr.Part #: STP6NK60Z
Datasheet: STP6NK60Z Datasheet (PDF)
Package/Case: TO-220
RoHS Status:
Stock Condition: 2452 pcs, New Original
Product Type: Transistors
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.952 | $0.952 |
| 10 | $0.794 | $7.940 |
| 50 | $0.717 | $35.850 |
| 100 | $0.638 | $63.800 |
| 500 | $0.591 | $295.500 |
| 1000 | $0.569 | $569.000 |
In Stock:2452 PCS
STP6NK60Z General Description
The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Features
- Extremely high dv/dt capability
- Gate charge minimized
- 100% avalanche tested
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 6 A |
| Rds On - Drain-Source Resistance: | 1.2 Ohms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V | Qg - Gate Charge: | 33 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 110 W | Channel Mode: | Enhancement |
| Tradename: | SuperMESH | Series: | STP6NK60Z |
| Packaging: | Tube | Brand: | STMicroelectronics |
| Configuration: | Single | Fall Time: | 19 ns |
| Forward Transconductance - Min: | 5 S | Height: | 9.15 mm |
| Length: | 10.4 mm | Product Type: | MOSFET |
| Rise Time: | 14 ns | Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Type: | MOSFET | Typical Turn-Off Delay Time: | 47 ns |
| Typical Turn-On Delay Time: | 14 ns | Width: | 4.6 mm |
| Unit Weight: | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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STP6NK60Z is a MOSFET (metal-oxide semiconductor field-effect transistor) chip used for power switching applications. It is capable of handling high current and voltage levels, making it suitable for various electronic devices. The chip's key features include low on-resistance, fast switching times, and built-in protection mechanisms. Its compact size and durability make it an ideal choice for power management in applications like power supplies, motor control, and lighting systems.
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Equivalent
Some equivalent products of the STP6NK60Z chip include: - IRFP4568PBF - IXFP44N50P3 - STB8NK60ZT4 - K5M5W6V4UG-RTK/P - PHP3006M2C -
Features
The STP6NK60Z is a N-channel enhancement mode power MOSFET. Its features include a maximum drain current rating of 6A, a breakdown voltage of 600V, a low on-resistance of 1.8 ohms, and a fast switching speed. It is designed for use in a wide range of applications, including power supplies, AC-DC converters, and motor drives. -
Pinout
The STP6NK60Z is a power MOSFET with a TO-220 package. It has 3 pins, namely Gate (G), Drain (D), and Source (S). The gate pin is used for controlling the flow of current, while the drain and source pins are used for the main current path. -
Manufacturer
The manufacturer of the STP6NK60Z is STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. -
Application Field
The STP6NK60Z is a power MOSFET transistor commonly used in applications that require high power and efficiency. It is primarily used in industrial, automotive, and consumer electronic devices such as AC-DC converters, motor control systems, power supplies, and LED drivers. -
Package
The STP6NK60Z chip is in TO-220 package type, TO-220 form, which measures approximately 10.4mm x 15.6mm in size.
Datasheet PDF
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