ST STP11NM60FD
N-Channel 600 V 11A (Tc) 160W (Tc) Through Hole TO-220
Brands: STMicroelectronics, Inc
Mfr.Part #: STP11NM60FD
Datasheet: STP11NM60FD Datasheet (PDF)
Package/Case: TO-220
Product Type: Transistors
STP11NM60FD General Description
N-Channel 600 V 11A (Tc) 160W (Tc) Through Hole TO-220
Features
- Voltage rating: 600V
- Current rating: 11A
- Low on-state resistance (RDS(on)): 0.38 Ohms (typical) at 25°C
- Fast switching performance
- Avalanche-rated for reliable operation in rugged environments
- Low gate charge (Qg) for efficient switching
- Low gate threshold voltage (Vth) for easy driving
Application
- Switch mode power supplies (SMPS)
- Motor drives and inverters
- LED lighting
- DC-DC converters
- Audio amplifiers
- Battery chargers
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 11 A |
Rds On - Drain-Source Resistance: | 400 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 40 nC |
Minimum Operating Temperature: | - 65 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 160 W | Channel Mode: | Enhancement |
Series: | STP11NM60FD | Packaging: | Tube |
Brand: | STMicroelectronics | Configuration: | Single |
Fall Time: | 15 ns | Forward Transconductance - Min: | 5.2 S |
Height: | 9.15 mm | Length: | 10.4 mm |
Product Type: | MOSFET | Rise Time: | 16 ns |
Factory Pack Quantity: | 1000 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-On Delay Time: | 20 ns | Width: | 4.6 mm |
Unit Weight: | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the STP11NM60FD component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRF7314
Brands : Infineon
Package :
Description :
Part Number : IPP11N06S2L-11
Brands : Nexperia
Package :
Description :
Part Number : FQPF11N60C
Brands :
Package :
Description : by Fairchild Semiconductor
Part Number : AOB11N60
Brands :
Package :
Description : by Alpha and Omega Semiconductor
Part points
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The STP11NM60FD is a power MOSFET chip produced by STMicroelectronics. It is designed for high power applications, such as motor control and power supplies. With a maximum drain current of 11A and a breakdown voltage of 600V, it offers efficient power switching capabilities. The chip features low on-resistance and gate charge, allowing for minimal power losses and improved efficiency.
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Equivalent
Some equivalent products of the STP11NM60FD chip include IRFP260N, IRFP460N, IRF1404, and IRFB4110. -
Features
The features of STP11NM60FD include a drain-source voltage of 600V, a continuous drain current of 11A, a low on-resistance of 0.65 ohms, a gate threshold voltage of 3V, a power dissipation of 68W, and a TO-220 full pack package. -
Pinout
The STP11NM60FD is a MOSFET transistor. It has a pin count of 3, which include the gate (G), drain (D), and source (S). The functions of these pins are as follows: the gate controls the flow of current between the drain and source, the drain terminal allows current to flow in or out of the transistor, and the source is connected to the reference point for the current flow. -
Manufacturer
STP11NM60FD is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. It is one of the world's largest semiconductor chip manufacturers, with a focus on providing a wide range of integrated circuits and solutions for various industries, including automotive, industrial, personal electronics, and more. -
Application Field
The STP11NM60FD is a high voltage N-channel Power MOSFET used in applications such as switch mode power supplies, lighting, motor control, and electric vehicle systems. It offers low on-resistance, high current capability, and reliable operation in high temperature environments. -
Package
The STP11NM60FD chip is available in a TO-220 package type. It has a standard form and size as per the TO-220 package, which measures approximately 10.16 mm x 15.74 mm x 4.32 mm.
Datasheet PDF
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