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ST STD12N65M2
N-Channel 650 V 8A (Tc) 85W (Tc) Surface Mount DPAK
Brands: STMicroelectronics, Inc
Mfr.Part #: STD12N65M2
Datasheet: STD12N65M2 Datasheet (PDF)
Package/Case: DPAK
Product Type: Transistors
RoHS Status:
Stock Condition: 2249 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | TO-252-3 |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V | Id - Continuous Drain Current: | 8 A |
| Rds On - Drain-Source Resistance: | 420 mOhms | Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | 25 V | Qg - Gate Charge: | 16.5 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 85 W | Configuration: | Single |
| Channel Mode: | Enhancement | Packaging: | Reel |
| Series: | STD12N65M2 | Transistor Type: | 1 N-Channel |
| Brand: | STMicroelectronics | Fall Time: | 13.5 ns |
| Product Type: | MOSFET | Rise Time: | 7 ns |
| Factory Pack Quantity: | 2500 | Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 34 ns | Typical Turn-On Delay Time: | 9 ns |
| Unit Weight: | 0.139332 oz | Tags | STD12N65, STD12N6, STD12N, STD12, STD1, STD |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | DPAK |
| feature-standard-package-name1 | TO-252 | feature-cecc-qualified | No |
| feature-esd-protection | feature-escc-qualified | ||
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STD12N65M2 is a power MOSFET chip used in electronic devices and power supplies. It is designed to efficiently handle high currents and voltages, making it suitable for applications such as motor control, switching regulators, and power converters. The chip offers low on-resistance and high-speed switching capabilities, making it ideal for high-performance systems that require efficient power management.
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Features
The STD12N65M2 is a power MOSFET transistor with a drain-source voltage rating of 650V, a drain current of 12A, and a low on-resistance of 0.34Ω. It is designed for high power and energy-efficient applications and offers a compact and reliable solution. -
Pinout
The STD12N65M2 is a power MOSFET transistor. It has 3 pins: Gate (G), Drain (D), and Source (S). The gate pin controls the flow of current between the drain and source pins. It is typically used in applications such as power supplies, motor control, and inverters. -
Manufacturer
The manufacturer of the STD12N65M2 is STMicroelectronics. It is a multinational semiconductor manufacturer and supplier specializing in designing, manufacturing, and distributing a wide range of electronic components and systems. -
Application Field
The STD12N65M2 is a power MOSFET transistor that is commonly used in various applications such as power supplies, motor control, lighting systems, and industrial automation. It is specifically designed to handle high currents and voltages, making it suitable for use in demanding applications that require efficient power management and control. -
Package
The STD12N65M2 chip is available in a TO-252 (DPAK) package. It comes in a discrete form with a size of approximately 6.6mm x 9.15mm.
Datasheet PDF
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