Orders Over
$5000vishay SI1869DH-T1-E3
The SI1869DH-T1-E3 is a surface mount load switch with level-shift capability, designed for a voltage rating of 20V and a current rating of 1.2A
Brands: Vishay
Mfr.Part #: SI1869DH-T1-E3
Datasheet: SI1869DH-T1-E3 Datasheet (PDF)
Package/Case: SOT-363-6
Product Type: Power Distribution Switches, Load Drivers
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI1869DH-T1-E3 General Description
The SI1869DH-T1-E3 is a P-channel MOSFET transistor manufactured by Vishay. It's designed for low voltage, high-speed switching applications in power management circuits. With a compact and efficient design, it offers a maximum drain-source voltage (VDS) of -30 volts, making it suitable for various electronic devices requiring power control at low voltages. Its low on-resistance (RDS(on)) ensures minimal power loss and high efficiency during operation.This transistor features a small footprint and is housed in a surface-mount DFN package, making it ideal for space-constrained applications. Its high-speed switching capability enables rapid response times in power management systems, enhancing overall performance.Furthermore, the SI1869DH-T1-E3 is RoHS compliant, ensuring environmental friendliness and regulatory compliance in electronic products. Its datasheet provides comprehensive details regarding electrical characteristics, thermal properties, and recommended operating conditions, facilitating easy integration into circuit designs
Features
Application
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-363-6 | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1.2 A | Rds On - Drain-Source Resistance | 165 mOhms |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Brand | Vishay Semiconductors |
Configuration | Dual | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Part # Aliases | SI1869DH-T1-BE3 SI1869DH-E3 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI1869DH-T1-E3 is a chip designed by Vishay Semiconductor. It is a dual P-channel enhancement mode MOSFET with a compact DFN package. The chip offers a low voltage drop and high energy-efficient performance suitable for a wide range of applications, including power management in portable electronic devices.
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Features
The SI1869DH-T1-E3 is a power MOSFET that operates at a voltage of 150V. It has a low on-state resistance and is designed for use in various power conversion applications. It provides high efficiency, fast switching speed, and low gate charge, making it suitable for applications requiring high power density and reliable performance. -
Pinout
The SI1869DH-T1-E3 is a dual N-channel MOSFET transistor. It has 6 pins in a DFN package. The pins are used for various functions like source, drain, and gate terminals of the two individual MOSFETs. -
Manufacturer
The manufacturer of the SI1869DH-T1-E3 is Vishay. Vishay is an American company that specializes in manufacturing electronic components, such as semiconductors and passive electronic components. -
Application Field
The SI1869DH-T1-E3 is a dual N-channel MOSFET used in power management applications, such as DC-DC converters, motor control, and battery chargers. It is designed for medium-power applications that require high efficiency and fast switching capabilities. -
Package
The SI1869DH-T1-E3 chip package type is DPAK, its form is a surface mount, and its size is 6.72mm x 9.65mm.
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Minimum order quantity starts from 1pcs.
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