Orders Over
$5000NE321000
RF JFET Transistors
Brands: NEC
Mfr.Part #: NE321000
Datasheet: NE321000 Datasheet (PDF)
Package/Case: Die
Product Type: RF FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NE321000 General Description
DESCRIPTIONThe NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.FEATURES• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz• Gate Length: Lg ≤ 0.20 µm• Gate Width : Wg = 160 µm
Features
- Super Low Noise Figure & High Associated Gain
- NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
- Gate Length: Lg ≤ 0.20 µm
- Gate Width : Wg = 160 µm
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | NEC | Product Category: | RF JFET Transistors |
Transistor Type: | pHEMT | Technology: | GaAs |
Operating Frequency: | 12 GHz | Gain: | 13 dB |
Vds - Drain-Source Breakdown Voltage: | 4 V | Vgs - Gate-Source Breakdown Voltage: | - 3 V |
Id - Continuous Drain Current: | 70 mA | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 200 mW | Mounting Style: | SMD/SMT |
Package / Case: | Die | Brand: | NEC/CEL |
Forward Transconductance - Min: | 55 mS | NF - Noise Figure: | 0.35 dB |
Product: | RF JFET | Product Type: | RF JFET Transistors |
Subcategory: | Transistors | Type: | GaAs pHEMT |
Product Category | RF JFET Transistors | Transistor Type | pHEMT |
Technology | GaAs | Operating Frequency | 12 GHz |
Gain | 13 dB | Vds - Drain-Source Breakdown Voltage | 4 V |
Vgs - Gate-Source Breakdown Voltage | - 3 V | Id - Continuous Drain Current | 70 mA |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 mW |
Mounting Style | SMD/SMT | Package / Case | Die |
Brand | NEC/CEL | Forward Transconductance - Min | 55 mS |
NF - Noise Figure | 0.35 dB | Product | RF JFET |
Product Type | RF JFET Transistors | Subcategory | Transistors |
Type | GaAs pHEMT |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products