TI CSD18543Q3AT
60V N-CHANNEL NEXFET POWER MOSF
Brands: Ti
Mfr.Part #: CSD18543Q3AT
Datasheet: CSD18543Q3AT Datasheet (PDF)
Package/Case: VSONP-8
RoHS Status:
Stock Condition: 140 pcs, New Original
Product Type: Transistors - FETs, MOSFETs - Single
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.730 | $0.730 |
10 | $0.607 | $6.070 |
30 | $0.545 | $16.350 |
250 | $0.484 | $121.000 |
500 | $0.448 | $224.000 |
1000 | $0.428 | $428.000 |
In Stock:140 PCS
CSD18543Q3AT General Description
MOSFET, N-CH, 60V, 35A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:66W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:NexFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Features
- Ultra-Low Qg and Qgd
- Low RDS(on)
- Low-Thermal Resistance
- Avalanche Rated
- Lead Free
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
Specifications
Parameter | Value | Parameter | Value |
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VDS (V) | 60 | Configuration | Single |
Rds(on) at VGS=4.5 V (max) (mΩ) | 15.6 | Rds(on) at VGS=10 V (max) (mΩ) | 9.9 |
IDM - pulsed drain current (max) (A) | 156 | QG (typ) (nC) | 11.1 |
QGD (typ) (nC) | 1.7 | QGS (typ) (nC) | 3.1 |
VGS (V) | 20 | VGSTH typ (typ) (V) | 2 |
ID - silicon limited at TC=25°C (A) | 60 | ID - package limited (A) | 35 |
Logic level | Yes | Operating temperature range (°C) | -55 to 150 |
Rating | Catalog |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The CSD18543Q3AT chip is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device used for power management in electronic systems. It is designed to provide high efficiency and low power dissipation, making it suitable for battery-powered applications. The chip offers a low on-resistance, fast switching speeds, and excellent thermal performance. Overall, the CSD18543Q3AT chip is ideal for applications such as smartphones, tablets, and other portable devices.
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Equivalent
The equivalent products of the CSD18543Q3AT chip include CSD18563Q5B, CSD18534Q5A, CSD18563Q3A, and CSD18560Q5B. These chips are all N-Channel NexFET power MOSFETs from Texas Instruments and have similar specifications and applications as the CSD18543Q3AT. -
Features
The CSD18543Q3AT is a dual N-channel, 60V MOSFET with low on-resistance and fast switching speed. It features a small package size and low parasitic capacitance, making it suitable for high-frequency applications and reducing energy losses. -
Pinout
The CSD18543Q3AT is a dual N-channel MOSFET. It has 8 pins (5 for the first MOSFET and 3 for the second). The function of this device is to provide a fast switching capability and low ON resistance for power applications. -
Manufacturer
Texas Instruments is the manufacturer of the CSD18543Q3AT. It is an American semiconductor company that designs and manufactures various electronic components for a range of industries including consumer electronics, industrial machinery, automotive, and telecommunications. -
Application Field
The CSD18543Q3AT is a P-channel power MOSFET that can be used in various applications such as power management, battery charging, motor control, and LED lighting. It provides a low on-resistance and high power dissipation capability, making it suitable for high-performance systems that require efficient power switching. -
Package
The CSD18543Q3AT chip has a package type of D2PAK, a form of SMD, and a size of 10.60mm x 9.90mm.
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