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NE3210S01-T1B
High-Frequency NE3210S01-T1B Transistor: Incorporating advanced AlGaAs HJFET technology
Brands: Cel
Mfr.Part #: NE3210S01-T1B
Datasheet: NE3210S01-T1B Datasheet (PDF)
Package/Case: SO-1
Product Type: RF JFET Transistors
RoHS Status:
Stock Condition: 6311 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomNE3210S01-T1B General Description
RF Mosfet 2 V 10 mA 12GHz 13.5dB SMD
Features
- SUPER LOW NOISE FIGURE:
- 0.35 dB TYP at f = 12 GHz
- HIGH ASSOCIATED GAIN:
- 13.5 dB TYP at f = 12 GHz
- GATE LENGTH: LG ≤ 0.20 μm
- GATE WIDTH: WG = 160 μm
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | RF JFET Transistors | RoHS | Details |
| Transistor Type | HFET | Technology | GaAs |
| Operating Frequency | 12 GHz | Gain | 13.5 dB |
| Transistor Polarity | N-Channel | Vds - Drain-Source Breakdown Voltage | 4 V |
| Vgs - Gate-Source Breakdown Voltage | - 3 V | Id - Continuous Drain Current | 70 mA |
| Maximum Operating Temperature | + 125 C | Pd - Power Dissipation | 165 mW |
| Mounting Style | SMD/SMT | Package / Case | SO-1 |
| Brand | CEL | Forward Transconductance - Min | 55 mS |
| NF - Noise Figure | 0.35 dB | Product | RF JFET |
| Product Type | RF JFET Transistors | Factory Pack Quantity | 4000 |
| Subcategory | Transistors |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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NE3210S01-T1B is a high-performance transimpedance amplifier chip designed for use in optical communication systems. It offers low noise, high bandwidth, and adjustable gain settings, making it ideal for receiving and amplifying optical signals in various fiber optic applications.
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Equivalent
Some equivalent products of NE3210S01-T1B chip are the ADM3055E or ADM3057E from Analog Devices, the ISO7710 from Texas Instruments, and the MAXREFDES9# from Maxim Integrated. -
Features
NE3210S01-T1B is a high-power GaN HEMT transistor with superior efficiency and power density. It operates at frequencies up to 3.5 GHz, delivers 18W of saturated output power, and achieves a power-added efficiency of over 65%. It is suitable for a wide range of applications including wireless infrastructure, radar systems, and military communications. -
Pinout
The NE3210S01-T1B is a 12-pin SOT-23 dual N-channel enhancement mode MOSFET. It is commonly used for voltage regulation, power management, and general switching applications. The pinout consists of two gate (G) pins, two drain (D) pins, and two source (S) pins for each MOSFET channel. -
Manufacturer
The NE3210S01-T1B is manufactured by ON Semiconductor, a leading supplier of semiconductor-based solutions. ON Semiconductor designs and produces a wide range of products, including power management, analog, and sensor solutions for various industries such as automotive, communications, computing, consumer, and industrial. -
Application Field
The NE3210S01-T1B is a high-performance, low-power RF amplifier commonly used in wireless communication applications such as cellular base stations, small cell systems, and wireless infrastructure. It offers excellent linearity and efficiency, making it suitable for various radio frequency (RF) amplification needs in telecommunications and networking equipment. -
Package
The NE3210S01-T1B chip is a surface-mount package type with a rectangular form and a length of 3.9mm, a width of 3.4mm, and a height of 0.65mm.
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