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NDT3055L
NDT3055L SOT223 RL MOSFET N-channel with 60V and 4A specifications
Brands: Onsemi
Mfr.Part #: NDT3055L
Datasheet: NDT3055L Datasheet (PDF)
Package/Case: SOT-223-4
RoHS Status:
Stock Condition: 8353 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.683 | $0.683 |
| 10 | $0.568 | $5.680 |
| 30 | $0.511 | $15.330 |
| 100 | $0.453 | $45.300 |
| 500 | $0.419 | $209.500 |
| 1000 | $0.403 | $403.000 |
In Stock:8353 PCS
NDT3055L General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
- 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V.
- Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOT-223-4 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 20 nC |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 3 W | Channel Mode | Enhancement |
| Series | NDT3055L | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 7 ns |
| Forward Transconductance - Min | 7 S | Height | 1.8 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 7.5 ns | Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 5 ns |
| Width | 3.5 mm | Part # Aliases | NDT3055L_NL |
| Unit Weight | 0.003951 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NDT3055L is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip. It is designed for high voltage and high current applications. The chip offers low on-resistance and low gate charge, enabling efficient power management. With its enhanced performance characteristics, the NDT3055L chip is commonly used in various electronic devices and applications, including power supplies, motor control circuits, lighting systems, and more.
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Equivalent
Some equivalent products of the NDT3055L chip include the IRF3055, FQPF8N50C, and STP8N50FI. These devices have similar specifications and can be used as replacements for the NDT3055L in various applications. -
Features
The NDT3055L is a power MOSFET transistor with a voltage rating of 60 volts and a current rating of 12 amps. It features low on-resistance, high thermal efficiency, and fast switching characteristics, making it suitable for a wide range of applications such as power supplies, motor controls, and LED lighting systems. -
Pinout
The NDT3055L is a power MOSFET with a TO-252 package. It has three pins: gate (G), drain (D), and source (S). The gate pin is used to control the switching of the device, while the drain and source pins handle the flow of current. -
Manufacturer
The manufacturer of the NDT3055L is ON Semiconductor. It is a global semiconductor supplier that designs, manufactures, and sells a wide range of semiconductor components for various applications such as automotive, industrial, consumer electronics, and more. -
Application Field
The NDT3055L N-channel MOSFET is commonly used in various application areas such as power management, switching circuits, motor control, and audio amplification. It can be employed in various electronic devices and systems where efficient power handling and low on-resistance characteristics are required. -
Package
The NDT3055L chip comes in a TO-220 package, which is a through-hole package commonly used for power devices. It is in a single form factor, meaning it has a single chip within the package. The TO-220 package has approximate dimensions of 10.67mm x 15.57mm x 4.57mm.
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