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NXP MW7IC18100NBR1

RF Amplifier IC GSM, EDGE 1.805GHz ~ 2.05GHz TO-272 WB-14

ISO14001 ISO9001 DUNS

Brands: NXP

Mfr.Part #: MW7IC18100NBR1

Datasheet: MW7IC18100NBR1 Datasheet (PDF)

Package/Case: TO-272 WB-14

Product Type: RF Amplifier

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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Quick Quote

Please submit RFQ for MW7IC18100NBR1 or email to us: Email: [email protected], we will contact you within 12 hours.

MW7IC18100NBR1 General Description

RF Amplifier IC GSM, EDGE 1.805GHz ~ 2.05GHz TO-272 WB-14

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Specifications

Parameter Value Parameter Value
Manufacturer: NXP Product Category: RF Amplifier
RoHS: Details Mounting Style: SMD/SMT
Type: Power Amplifiers Technology: Si
Operating Frequency: 1.805 GHz to 2.05 GHz Gain: 30 dB
Maximum Operating Temperature: + 225 C Qualification: AEC-Q100
Series: MW7IC18100N Packaging: MouseReel
Brand: NXP Semiconductors Input Return Loss: 15 dB
Moisture Sensitive: Yes Number of Channels: 1 Channel
Product Type: RF Amplifier Factory Pack Quantity: 500
Subcategory: Wireless & RF Integrated Circuits Supply Voltage - Max: 32 V
Supply Voltage - Min: 24 V

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MW7IC18100NBR1 is a high-power RF amplifier chip designed for use in wireless infrastructure applications. It operates at a frequency range of 1805-1880 MHz and can deliver up to 100W of output power. This chip is highly efficient and provides excellent linearity, making it ideal for applications requiring high-power amplification.
  • Equivalent

    The equivalent products of the MW7IC18100NBR1 chip are Freescale Semiconductor MRF7S18170N and Infineon Technologies BGT7F7510.
  • Features

    MW7IC18100NBR1 is a wideband RF integrated circuit with a frequency range of 1805-1880 MHz. It has a gain of 23.5 dB and output power of 36.5 dBm. This LDMOS device is designed for use in GSM and EDGE applications, offering high linearity and efficiency.
  • Pinout

    MW7IC18100NBR1 is a GaN RF power transistor with a pin count of 3 (gate, drain, source). It is designed for use in high-power industrial, scientific, and medical (ISM) applications. This transistor provides high gain, efficiency, and ruggedness in a compact package.
  • Manufacturer

    MW7IC18100NBR1 is manufactured by Freescale Semiconductor Inc, a semiconductor company that designs and produces various communication and embedded semiconductor devices. Freescale Semiconductor specializes in developing products for automotive, industrial, consumer, and networking markets.
  • Application Field

    MW7IC18100NBR1 is commonly used in industrial, scientific, and medical (ISM) applications, such as radar systems, digital radio communication, and RF heating. It can also be integrated into power amplifiers for automotive and aerospace applications. Additionally, it is used in RF energy and wireless power transmission systems.
  • Package

    The MW7IC18100NBR1 chip is a ceramic GaN-on-SiC HEMT package that comes in the form of a MOSFET transistor. It has a size of 15.87 mm x 6.30 mm x 2.00 mm and is designed for RF power amplification applications.

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  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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